P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

2005 ◽  
Vol 202 (6) ◽  
pp. 1060-1065 ◽  
Author(s):  
H. W. Liang ◽  
Y. M. Lu ◽  
D. Z. Shen ◽  
Y. C. Liu ◽  
J. F. Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
P Type

Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy

2015 ◽  
Vol 7 (16) ◽  
pp. 8894-8899 ◽  
Author(s):  
Mohammad Suja ◽  
Sunayna B. Bashar ◽  
Muhammad M. Morshed ◽  
Jianlin Liu
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
P Type

Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2012 ◽  
Vol 71 ◽  
pp. 18-20 ◽  
Author(s):  
Ping Ding ◽  
Xinhua Pan ◽  
Jingyun Huang ◽  
Bin Lu ◽  
Honghai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type A ◽  
Zno Thin Films ◽  
Sapphire Substrates ◽  
P Type

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 305-310 ◽  
Author(s):  
H.W. Liang ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
J.F. Yan ◽  
B.H. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Zno Thin Films
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