Stable p-type ZnO thin films on sapphire and n-type 4H-SiC achieved by controlling oxygen pressure using radical-source laser molecular beam epitaxy
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2015 ◽
Vol 7
(16)
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pp. 8894-8899
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2005 ◽
Vol 202
(6)
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pp. 1060-1065
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2001 ◽
Vol 226
(2-3)
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pp. 281-286
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2008 ◽
Vol 51
(3)
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pp. 232-236
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