Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance

1995 ◽  
Vol 78 (12) ◽  
pp. 7059-7062 ◽  
Author(s):  
P. Gonon ◽  
E. Gheeraert ◽  
A. Deneuville ◽  
F. Fontaine ◽  
L. Abello ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Spin Resonance

Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Characterization of defects in monocrystalline CVD diamond films by electron spin resonance

2003 ◽  
Vol 12 (3-7) ◽  
pp. 511-515 ◽  
Author(s):  
K. Iakoubovskii ◽  
A. Stesmans ◽  
K. Suzuki ◽  
J. Kuwabara ◽  
A. Sawabe
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance

Characterization of fluorine-doped silicon dioxide films by Raman spectroscopy and Electron-spin resonance

2007 ◽  
Vol 515 (17) ◽  
pp. 6682-6685 ◽  
Author(s):  
K. Matsuda ◽  
Y. Yamaguchi ◽  
N. Morita ◽  
T. Matsunobe ◽  
M. Yoshikawa
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Silicon Dioxide ◽  
Electron Spin ◽  
Silicon Dioxide Films ◽  
Spin Resonance ◽  
Doped Silicon

Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy

1997 ◽  
Vol 81 (1) ◽  
pp. 234-237 ◽  
Author(s):  
C. F. O. Graeff ◽  
C. E. Nebel ◽  
M. Stutzmann ◽  
A. Flöter ◽  
R. Zachai
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Polycrystalline Diamond ◽  
Electron Spin Resonance Spectroscopy ◽  
Resonance Spectroscopy ◽  
Spin Resonance

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

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