Correlation Between Defects and Electrical Conduction in Surface Conductive Layer of CVD-diamond Films

1996 ◽  
Vol 442 ◽  
Author(s):  
Y. Show ◽  
F. Matsuoka ◽  
S. Ri ◽  
Y. Akiba ◽  
T. Kurosu ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Carbon Atom ◽  
Electron Spin ◽  
Electrical Conduction ◽  
Nearest Neighbor ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Conductive Layer ◽  
Dangling Bond ◽  
Spin Resonance

Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance ( ESR ) and two points probe technique methods. The ESR analysis revealed the presence of Pac-center with spin density of 1020 spins/cm3. The Pac-center is composed from two ESR signals: ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated Pac-center ). The hole associated Pac-center is an electrically active defect.

Electron spin resonance characterization of phosphorus-doped CVD diamond films

2004 ◽  
Vol 201 (11) ◽  
pp. 2451-2456 ◽  
Author(s):  
M. Katagiri ◽  
J. Isoya ◽  
S. Koizumi ◽  
H. Kanda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance ◽  
Phosphorus Doped

Characterization of defects in monocrystalline CVD diamond films by electron spin resonance

2003 ◽  
Vol 12 (3-7) ◽  
pp. 511-515 ◽  
Author(s):  
K. Iakoubovskii ◽  
A. Stesmans ◽  
K. Suzuki ◽  
J. Kuwabara ◽  
A. Sawabe
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Spin Resonance

The Detection of Alkoxy and Other Radicals in the Gamma Radiolysis of Alcohols by an Electron Spin Resonance and Spin Trapping Method

1974 ◽  
Vol 52 (21) ◽  
pp. 3645-3650 ◽  
Author(s):  
Frederick Peter Sargent ◽  
Edward Michael Gardy
Keyword(s):  
Electron Spin Resonance ◽  
Carbon Atom ◽  
Electron Spin ◽  
Spin Trapping ◽  
Methyl Radicals ◽  
Alkoxy Radicals ◽  
Spin Resonance ◽  
Gamma Radiolysis ◽  
Trapping Method

The radicals produced during γ radiolysis of methanol, ethanol, 1-propanol, 2-propanol, and t-butanol have been trapped by reaction with 2-nitroso-2-methylpropane (t-nitrosobutane) to give nitroxides which are detected by e.s.r.[Formula: see text]All the alcohols gave alkoxy radicals and, with the exception of t-butanol, radicals derived by the loss of an H atom from the carbon atom adjacent to the OH group. Methyl radicals were detected in t-butanol.

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

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