Fluorocarbon Coatings Via Plasma Enhanced Chemical Vapor Deposition of 1H,1H,2H,2H-perfluorodecyl Acrylate-1, Spectroscopic Characterization by FT-IR and XPS

2010 ◽  
Vol 7 (11) ◽  
pp. 939-950 ◽  
Author(s):  
Virendra Kumar ◽  
Jerome Pulpytel ◽  
Farzaneh Arefi-Khonsari
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Ft Ir

scholarly journals Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane

2019 ◽  
Vol 19 (1) ◽  
pp. 47 ◽  
Author(s):  
Myat Kyaw ◽  
Shinsuki Mori ◽  
Nathaniel Dugos ◽  
Susan Roces ◽  
Arnel Beltran ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Gas Barrier ◽  
Membrane Performance ◽  
Membrane Characterization ◽  
Separation Membrane ◽  
Zeolite 5A ◽  
Ft Ir

Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature

scholarly journals Chemical Vapor Deposition of IrTe2 Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 575
Author(s):  
Rui Zhou ◽  
Zhaoyang Zhao ◽  
Juanxia Wu ◽  
Liming Xie
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Electrical Measurement ◽  
Charge Ordering ◽  
Temperature Dependent ◽  
Raman Spectroscopic

Two-dimensional (2D) IrTe2 has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe2 films using different Ir precursors on different substrates. The Ir(acac)3 precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe2 films. Temperature-dependent Raman spectroscopic characterization has shown the q1/8 phase to HT phase at ~250 K in the as-grown IrTe2 films on h-BN. Electrical measurement has shown the HT phase to q1/5 phase at around 220 K.

scholarly journals Spectroscopic characterization of graphene films grown on Pt(111) surface by chemical vapor deposition of ethylene

2013 ◽  
Vol 44 (10) ◽  
pp. 1393-1397 ◽  
Author(s):  
Enzo Cazzanelli ◽  
T. Caruso ◽  
M. Castriota ◽  
A. R. Marino ◽  
A. Politano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Films

Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

2013 ◽  
Vol 117 (39) ◽  
pp. 9454-9461 ◽  
Author(s):  
Chun-Da Liao ◽  
Yi-Ying Lu ◽  
Srinivasa Reddy Tamalampudi ◽  
Hung-Chieh Cheng ◽  
Yit-Tsong Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spectroscopic Characterization ◽  
Graphene Sheets ◽  
Large Area ◽  
Raman Spectroscopic

FT-IR Analysis of the Photolytic Laser-Induced Chemical Vapor Deposition of Germanium Films

1986 ◽  
Vol 40 (3) ◽  
pp. 374-378 ◽  
Author(s):  
A. E. Stanley ◽  
R. A. Johnson ◽  
J. B. Turner ◽  
A. H. Roberts
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
Conversion Rates ◽  
End Products ◽  
Ft Ir ◽  
Ir Analysis ◽  
Germanium Films

Germanium and doped-germanium polycrystalline films were formed with the use of photolytic CO2 laser-induced chemical vapor deposition. The compounds which yielded germanium in large quantities were germane, ethylgermane, and diethylgermane. Triethylgermane produces germanium in trace quantities. Gas-phase reactions were monitored with the use of Fourier transform infrared spectroscopy, also used for identification of end products. Scanning electron microscopy was used for analysis of the films. The products identified on irradiation of germane were germanium and hydrogen, with conversion rates of 86%. On irradiation of diethylgermane and ethylgermane, ethylene, germane, germanium, and hydrogen were produced. Germanium films doped with cadmium and aluminum were produced successfully by the irradiation of germane mixtures containing dimethylcadmium or trimethylaluminum, respectively.

SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 257-260
Author(s):  
Kanji Yasui ◽  
T. Kurimoto ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Thermal Oxide ◽  
Ft Ir ◽  
Sic Films

The growth of 3C-SiC on thermal oxide layer of Si (SiO2) was investigated by hot-mesh (HM) chemical vapor deposition (CVD), which utilizes hot tungsten (W) wires of a mesh structure as a catalyzer. The SiC films were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and cross sectional transmission electron microscopy (TEM). From the XRD spectra of SiC films grown on SiO2 layer, (100) oriented SiC films were grown at the substrate temperatures of 750-800°C and the mesh temperature of 1600°C, while polycrystalline SiC films were grown at the substrate temperature above 900°C. From the data of FT-IR, TEM and the growth rate, the growth characteristics of SiC crystal by HMCVD were discussed.

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