High Rate Deposition of Nanofunctionalized Transparent Coatings on Metal and Glass Substrates by Hollow Cathode Arc Activated Reactive Evaporation

2007 ◽  
Vol 4 (S1) ◽  
pp. S551-S556 ◽  
Author(s):  
Henry Morgner ◽  
Christoph Metzner ◽  
Olaf Zywitzki
Keyword(s):  
Hollow Cathode ◽  
High Rate ◽  
Glass Substrates ◽  
Reactive Evaporation ◽  
Activated Reactive Evaporation ◽  
Cathode Arc ◽  
Transparent Coatings

High-rate hot hollow cathode arc deposition of chromium and chromium nitride films

2004 ◽  
Vol 188-189 ◽  
pp. 703-707 ◽  
Author(s):  
H. Baránková ◽  
L. Bárdoš ◽  
L.-E. Gustavsson
Keyword(s):  
Hollow Cathode ◽  
High Rate ◽  
Chromium Nitride ◽  
Cathode Arc ◽  
Arc Deposition

GROWTH OF INDIUM-RICH NANOCRYSTALLINE INDIUM GALLIUM NITRIDE THIN FILMS BY MODIFIED ACTIVATED REACTIVE EVAPORATION

2011 ◽  
Vol 10 (01n02) ◽  
pp. 141-145 ◽  
Author(s):  
S. R. MEHER ◽  
KUYYADI P. BIJU ◽  
MAHAVEER K. JAIN
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Hexagonal Wurtzite Structure ◽  
Photoluminescence Spectra ◽  
Glass Substrates ◽  
Reactive Evaporation ◽  
Evaporation Technique ◽  
Indium Gallium ◽  
Activated Reactive Evaporation ◽  
Good Agreement

Indium-rich In x Ga 1-x N thin films were prepared on glass substrates by a mixed source modified activated reactive evaporation technique. All the films exhibit hexagonal wurtzite structure preferentially oriented along the c-axis. The band gap values obtained through Urbach fitting of the absorption edge were found to be in good agreement with the values obtained from photoluminescence spectra. The decrease in band gap below 1.9 eV (i.e., for pure InN ) for indium-rich films is mainly due to the compensation of Burstein–Moss shift due to gallium incorporation into the lattice which is further confirmed from the carrier concentration measurements.

PREPARATION AND CHARACTERIZATION OF INDIUM OXIDE AND INDIUM TIN OXIDE FILMS BY ACTIVATED REACTIVE EVAPORATION

2006 ◽  
Vol 13 (02n03) ◽  
pp. 221-225 ◽  
Author(s):  
K. NARASIMHA RAO ◽  
SANJAY KASHYAP
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Electron Gun ◽  
Glass Substrates ◽  
Reactive Evaporation ◽  
Deposition Parameters ◽  
Activated Reactive Evaporation ◽  
Ito Films

Transparent and conducting oxide films find many applications because of their excellent properties such as high optical transparency, low surface resistance, high infrared reflectance, etc. Realization of these properties depend upon the choice of the deposition technique and the control of deposition parameters. In this paper, we report the preparation of highly transparent and conducting films of indium oxide ( In 2 O 3) and indium tin oxide (ITO) by activated reactive evaporation on glass substrates. These films were deposited by evaporating pure indium and 90% In + 10% Sn alloy using an electron gun in the presence of oxygen ions at ambient temperature. Films of different thickness have been prepared and their optical, electrical and structural properties are studied. In 2 O 3 films showed higher transparency (90%) compared to ITO films (85%) but the electrical resistivity was observed to be little higher (2.5 × 10-3 Ω cm) compared to ITO films (6 × 10-4 Ωcm). Hall measurements on aged ITO films gave the charge density of 3 × 1020 per cm3 and mobility 35.6 cm2/V-s. The refractive index and extinction coefficient were found to be around 2.0 and 0.005 for ITO films and 2.10 and 0.001 for In 2 O 3 films at 550 nm respectively. ITO and In 2 O 3 films were amorphous in nature for lesser thickness, but for thicker films, the partial crystallinity was observed.

High rate deposition of amorphous hydrogenated carbon films by hollow cathode arc PECVD

2012 ◽  
Vol 212 ◽  
pp. 67-71 ◽  
Author(s):  
Burkhard Zimmermann ◽  
Fred Fietzke ◽  
Heidrun Klostermann ◽  
Jan Lehmann ◽  
Frans Munnik ◽  
...  
Keyword(s):  
Hollow Cathode ◽  
Carbon Films ◽  
High Rate ◽  
Cathode Arc ◽  
Amorphous Hydrogenated Carbon
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