Structural control of oligomeric methyl silsesquioxane precursors and their thin-film properties

2002 ◽  
Vol 40 (10) ◽  
pp. 1560-1571 ◽  
Author(s):  
Long-Hua Lee ◽  
Wen-Chang Chen ◽  
Wei-Chih Liu
Keyword(s):  
Thin Film ◽  
Structural Control ◽  
Film Properties ◽  
Methyl Silsesquioxane

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Annealing in water vapor as a new method for improvement of silicon thin film properties

2006 ◽  
Vol 352 (9-20) ◽  
pp. 955-958 ◽  
Author(s):  
S. Honda ◽  
A. Fejfar ◽  
J. Kočka ◽  
T. Yamazaki ◽  
A. Ogane ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Vapor ◽  
New Method ◽  
Silicon Thin Film ◽  
Film Properties

scholarly journals Enhancement of Photon Absorption onBaxSr1-xTiO3Thin-Film Semiconductor Using Photonic Crystal

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Abd. Wahidin Nuayi ◽  
Husin Alatas ◽  
Irzaman S. Husein ◽  
Mamat Rahmat
Keyword(s):  
Thin Film ◽  
Photonic Crystal ◽  
Mole Fraction ◽  
Visible Spectrum ◽  
Transparent Conductive Oxide ◽  
Photon Absorption ◽  
Film Properties ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Bst Thin Film

Enhancement of photon absorption on barium strontium titanate (BaxSr1-xTiO3) thin-film semiconductor for mole fractionx=0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500°C for 15 hours with increasing rate of 1.6°C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.

Effect of deposition pressure and post deposition annealing on SmCo thin film properties

2008 ◽  
Vol 5 (12) ◽  
pp. 3759-3762 ◽  
Author(s):  
Th. Speliotis ◽  
E. Makarona ◽  
F. Chouliaras ◽  
C. A. Charitidis ◽  
C. Tsamis ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Pressure ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics

Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

1995 ◽  
Vol 389 ◽  
Author(s):  
Shaohua Liu ◽  
Peter Solomon ◽  
R. Carpio ◽  
B. Fowler ◽  
D. Simmons ◽  
...  
Keyword(s):  
Thin Film ◽  
Semiconductor Industry ◽  
Current Approach ◽  
Infrared Reflectance ◽  
Film Properties ◽  
Reflectance Measurement ◽  
Infrared Spectrometer ◽  
Ft Ir ◽  
And Control ◽  
Cluster Tool

ABSTRACTThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

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