scholarly journals Electrostatic potential fluctuations and light‐soaking effects in Cu(In,Ga)Se 2 solar cells

2020 ◽  
Vol 28 (9) ◽  
pp. 919-934
Author(s):  
Aleksandra Nikolaeva ◽  
Maximilian Krause ◽  
Norbert Schäfer ◽  
Wolfram Witte ◽  
Dimitrios Hariskos ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrostatic Potential ◽  
Potential Fluctuations

scholarly journals A microscopic and macroscopic investigation of the adsorption of N719 dye on ZnO nanopowders (ZNP) and ZnO nanorods (ZNR) for dye sensitized solar cells using statistical physics treatment and DFT simulation

RSC Advances ◽  
2020 ◽  
Vol 10 (46) ◽  
pp. 27615-27632 ◽  
Author(s):  
Marwa Ben Manaa ◽  
Noureddine Issaoui ◽  
Youssef O. Al-Ghamdi ◽  
Hafedh Belmabrouk ◽  
Abdelmottaleb Ben Lamine
Keyword(s):  
Solar Cells ◽  
Adsorption Isotherms ◽  
Electrostatic Potential ◽  
Statistical Physics ◽  
Molecular Electrostatic Potential ◽  
Zno Nanorods ◽  
Dye Sensitized Solar Cells ◽  
Dft Simulation ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Adsorption isotherms of N719 dye on (a) ZNP and (b) ZNR and the molecular electrostatic potential (MEP) map of (c) N719 dye and (d) ZnO.

scholarly journals The nature of electrostatic potential fluctuations in Cu2ZnSnS4 and their role on photovoltaic device performance

2013 ◽  
Vol 471 ◽  
pp. 012014 ◽  
Author(s):  
B G Mendis ◽  
M D Shannon ◽  
M C J Goodman ◽  
J D Major ◽  
A A Taylor ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Photovoltaic Device ◽  
Device Performance ◽  
Potential Fluctuations

Critical Role of Molecular Electrostatic Potential on Charge Generation in Organic Solar Cells

2018 ◽  
Vol 36 (6) ◽  
pp. 491-494 ◽  
Author(s):  
Huifeng Yao ◽  
Deping Qian ◽  
Hao Zhang ◽  
Yunpeng Qin ◽  
Bowei Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrostatic Potential ◽  
Organic Solar Cells ◽  
Molecular Electrostatic Potential ◽  
Critical Role ◽  
Charge Generation

Luminescence properties ofCu2ZnSn(S,Se)4solar cell absorbers: State filling versus screening of electrostatic potential fluctuations

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
Mario Lang ◽  
Christian Zimmermann ◽  
Christoph Krämmer ◽  
Tobias Renz ◽  
Christian Huber ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Luminescence Properties ◽  
Potential Fluctuations ◽  
State Filling

scholarly journals A PL and PLE study of high Cu content Cu-=SUB=-2-=/SUB=-ZnSnSe-=SUB=-4-=/SUB=- films on Mo/glass and solar cells -=SUP=-*-=/SUP=-

2019 ◽  
Vol 61 (5) ◽  
pp. 1001
Author(s):  
Mikhail A. Sulimov ◽  
Mikhail V. Yakushev ◽  
Ian Forbes ◽  
Jose M. Prieto ◽  
Alexander V. Mudryi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Broad Band ◽  
Blue Shift ◽  
Interface Layer ◽  
Excitation Intensity ◽  
Chemical Effect ◽  
Potential Fluctuations ◽  
Pl Spectra ◽  
Cu Content ◽  
The Mean

AbstractCu_2ZnSnSe_4 (CZTSe) is amongst leading candidates for the absorber layer in sustainable solar cells. We examine CZTSe thin films with [Cu]/[Zn + Sn] of 0.99 and [Zn]/[Sn] of 1.07, deposited on Mo/glass substrates, and solar cells fabricated from these films. The bandgap ( E _ g ) of the as deposited films and solar cells was examined by photoluminescence excitation (PLE) whereas the temperature and excitation intensity dependence of photoluminescence (PL) spectra was used to examine the nature of radiative recombination. The 6 K PL spectra of CZTSe/Mo exhibit an intense broad and asymmetrical band P1 at 0.822 eV and a lower intensity band P2 at 0.93 eV. The shape of this band, high rates of blue shift with excitation intensity rise (  j -shift) j (P1) = 14 meV and j (P2) = 8 meV per decade, and red shifts of both bands with increasing temperature suggest that both bands are associated with valence band tails due to potential fluctuations caused by high populations of charged defects. The mean depth of such fluctuation γ of 24 meV was estimated from the low energy side of P1. Device processing increased E _ g , blue shifted P1, decreased its width, j -shift and the mean depth of potential fluctuations. These can be due to the annealing and/or can partly be related to KCN etching and the chemical effect of Cd, from CdS replacing copper at the CdS–CZTSe interface layer. Processing induced a new broad band P3 at 1.3 eV (quenching with E _ a = 200 meV). We attributed P3 to defects in the CdS layer.

Electrostatic potential fluctuations in a Maxwellian plasma

2006 ◽  
Vol 13 (1) ◽  
pp. 014505 ◽  
Author(s):  
R. D. Hazeltine ◽  
J. D. Lowrey
Keyword(s):  
Electrostatic Potential ◽  
Potential Fluctuations ◽  
Maxwellian Plasma
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