Luminescence properties ofCu2ZnSn(S,Se)4solar cell absorbers: State filling versus screening of electrostatic potential fluctuations

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
Mario Lang ◽  
Christian Zimmermann ◽  
Christoph Krämmer ◽  
Tobias Renz ◽  
Christian Huber ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Luminescence Properties ◽  
Potential Fluctuations ◽  
State Filling

scholarly journals The nature of electrostatic potential fluctuations in Cu2ZnSnS4 and their role on photovoltaic device performance

2013 ◽  
Vol 471 ◽  
pp. 012014 ◽  
Author(s):  
B G Mendis ◽  
M D Shannon ◽  
M C J Goodman ◽  
J D Major ◽  
A A Taylor ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Photovoltaic Device ◽  
Device Performance ◽  
Potential Fluctuations

scholarly journals Electrostatic potential fluctuations and light‐soaking effects in Cu(In,Ga)Se 2 solar cells

2020 ◽  
Vol 28 (9) ◽  
pp. 919-934
Author(s):  
Aleksandra Nikolaeva ◽  
Maximilian Krause ◽  
Norbert Schäfer ◽  
Wolfram Witte ◽  
Dimitrios Hariskos ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrostatic Potential ◽  
Potential Fluctuations

Electrostatic potential fluctuations in a Maxwellian plasma

2006 ◽  
Vol 13 (1) ◽  
pp. 014505 ◽  
Author(s):  
R. D. Hazeltine ◽  
J. D. Lowrey
Keyword(s):  
Electrostatic Potential ◽  
Potential Fluctuations ◽  
Maxwellian Plasma

Two-field transport models for magnetized plasmas

2001 ◽  
Vol 65 (2) ◽  
pp. 81-96 ◽  
Author(s):  
O. E. GARCIA
Keyword(s):  
Electrostatic Potential ◽  
Normal Mode Analysis ◽  
Low Frequency ◽  
Mode Analysis ◽  
Marginal Stability ◽  
Nonlinear Transport ◽  
Potential Fluctuations ◽  
Energy Functionals ◽  
Drift Wave ◽  
Characteristic Features

Two-field fluid models for low-frequency density and electrostatic potential fluctuations in a purely toroidal magnetized low-β plasma are discussed. In particular, we present some simple models suitable for investigating plasma transport close to marginal stability. For gradient-driven fluctuations, linear normal mode analysis of the interchange and resistive drift wave instabilities are reviewed, with attention to the relative phase and amplitude of density and electrostatic potential fluctuations. This reveals many characteristic features of drift-wave fluctuations that are also observed in laboratory experiments and during ionospheric irregularities. Finally, these results are used to investigate the nonlinearly conserved energy functionals, discussing the effect of magnetic field curvature and particle collisions on energy, enstrophy, and cross-correlation between density and vorticity fluctuations. Implications for turbulent fluctuations and nonlinear transport in laboratory and ionospheric plasmas are discussed.

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Effect of annealing temperature on luminescence properties of ZnWO 4 :Eu 3+ nanophosphor

2019 ◽  
Vol 14 (5) ◽  
pp. 496-500 ◽  
Author(s):  
Chunyang Li ◽  
Xiaodi Du ◽  
Yurong Shi ◽  
Zhenling Wang
Keyword(s):  
Annealing Temperature ◽  
Luminescence Properties
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