Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

2018 ◽  
Vol 26 (9) ◽  
pp. 740-744 ◽  
Author(s):  
Arto Aho ◽  
Riku Isoaho ◽  
Antti Tukiainen ◽  
Gabriele Gori ◽  
Roberta Campesato ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Dilute Nitride ◽  
Space Applications

POSS Polyimide Sealed Flexible Triple‐Junction GaAs Thin‐Film Solar Cells for Space Applications

2021 ◽  
pp. 2100603
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Thin Film Solar Cells ◽  
Space Applications

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Performance ◽  
Cost Effective ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Lift Off ◽  
Lattice Matched

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Enhanced Efficiency of Metamorphic Triple Junction Solar Cells for Space Applications

2017 ◽  
Vol 34 (6) ◽  
pp. 068801 ◽  
Author(s):  
Du-Xiang Wang ◽  
Ming-Hui Song ◽  
Jing-Feng Bi ◽  
Wen-Jun Chen ◽  
Sen-Lin Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Space Applications

scholarly journals Effect of the Irradiation on Optical and Electrical Properties of Triple-Junction Flexible Thin Solar Cells for Space Applications

2019 ◽  
Vol 7 ◽  
Author(s):  
Jacopo Parravicini ◽  
Francesco Arcadi ◽  
Alessia Le Donne ◽  
Roberta Campesato ◽  
Mariacristina Casale ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Triple Junction ◽  
Optical And Electrical Properties ◽  
Space Applications ◽  
Thin Solar Cells

Effects of 1.0–11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications

2014 ◽  
Vol 31 (8) ◽  
pp. 086103 ◽  
Author(s):  
Rong Wang ◽  
Ming Lu ◽  
Tian-Cheng Yi ◽  
Kui Yang ◽  
Xiao-Xia Ji
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Triple Junction ◽  
Space Applications

scholarly journals Ab initio electronic stopping power for protons in Ga 0.5 In 0.5 P/GaAs/Ge triple-junction solar cells for space applications

2020 ◽  
Vol 7 (11) ◽  
pp. 200925
Author(s):  
Natalia E. Koval ◽  
Fabiana Da Pieve ◽  
Emilio Artacho
Keyword(s):  
Solar Cells ◽  
Energy Loss ◽  
Ab Initio ◽  
Triple Junction ◽  
Density Functional ◽  
Interface Energy ◽  
Stopping Power ◽  
Low Velocity ◽  
Space Applications ◽  
Electronic Stopping Power

Motivated by the radiation damage of solar panels in space, firstly, the results of Monte Carlo particle transport simulations are presented for proton impact on triple-junction Ga 0.5 In 0.5 P/GaAs/Ge solar cells, showing the proton projectile penetration in the cells as a function of energy. It is followed by a systematic ab initio investigation of the electronic stopping power (ESP) for protons in different layers of the cell at the relevant velocities via real-time time-dependent density functional theory calculations. The ESP is found to depend significantly on different channelling conditions, which should affect the low-velocity damage predictions, and which are understood in terms of impact parameter and electron density along the path. Additionally, we explore the effect of the interface between the layers of the multilayer structure on the energy loss of a proton, along with the effect of strain in the lattice-matched solar cell. Both effects are found to be small compared with the main bulk effect. The interface energy loss has been found to increase with decreasing proton velocity, and in one case, there is an effective interface energy gain.

Recent advances in high-efficiencyIII-V multi-junction solar cells for space applications: ultra triple junction qualification

2005 ◽  
Vol 13 (2) ◽  
pp. 133-139 ◽  
Author(s):  
Hojun Yoon ◽  
Jennifer E. Granata ◽  
Peter Hebert ◽  
Richard R. King ◽  
Christopher M. Fetzer ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Space Applications ◽  
Recent Advances

scholarly journals POSS Polyimide Sealed Flexible Triple‐Junction GaAs Thin‐Film Solar Cells for Space Applications (Adv. Mater. Technol. 12/2021)

2021 ◽  
Vol 6 (12) ◽  
pp. 2170068
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Thin Film Solar Cells ◽  
Space Applications

scholarly journals Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125217 ◽  
Author(s):  
Lei Zhang ◽  
Pingjuan Niu ◽  
Yuqiang Li ◽  
Minghui Song ◽  
Jianxin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Efficiency ◽  
Space Applications
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