scholarly journals Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

AIP Advances ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 125217 ◽  
Author(s):  
Lei Zhang ◽  
Pingjuan Niu ◽  
Yuqiang Li ◽  
Minghui Song ◽  
Jianxin Zhang ◽  
...  
2021 ◽  
pp. 2100603
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  

2012 ◽  
Vol 2 (3) ◽  
pp. 393-397 ◽  
Author(s):  
Ram Homier ◽  
Abdelatif Jaouad ◽  
Artur Turala ◽  
Christopher E. Valdivia ◽  
Denis Masson ◽  
...  

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yang ◽  
S. Guha

AbstractOne of the most effective techniques used to obtain high quality amorphous silicon alloys is the use of hydrogen dilution during film growth. The resultant material exhibits a more ordered microstructure and gives rise to high efficiency solar cells. As the hydrogen dilution increases, however, a threshold is reached, beyond which microcrystallites begin to form rapidly. In this paper, we review some of the interesting features associated with the thin film materials obtained from various hydrogen dilutions. They include the observation of linear-like objects in the TEM micrograph, a shift of the principal Si TO band in the Raman spectrum, a sharp, low temperature peak in the H2 evolution spectrum, a shift of the wagging mode in the IR spectrum, and a narrowing of the Si (111) peak in the X-ray diffraction pattern. These spectroscopic tools have allowed us to optimize deposition conditions to near the threshold of microcrystallinity and obtain desired high quality materials. Incorporation of the improved materials into device configuration has significantly enhanced the solar cell performance. Using a spectral-splitting, triple-junction configuration, the spectral response of a typical high efficiency device spans from below 350 nm to beyond 950 nm with a peak quantum efficiency exceeding 90%; the triple stack generates a photocurrent of 27 mA/cm2. This paper describes the effect of the improved materials on various solar cell structures, including a 13% active-area, stable triple-junction device.


2017 ◽  
Vol 34 (6) ◽  
pp. 068801 ◽  
Author(s):  
Du-Xiang Wang ◽  
Ming-Hui Song ◽  
Jing-Feng Bi ◽  
Wen-Jun Chen ◽  
Sen-Lin Li ◽  
...  

2015 ◽  
Vol 8 (1) ◽  
pp. 303-316 ◽  
Author(s):  
Abd. Rashid bin Mohd Yusoff ◽  
Dongcheon Kim ◽  
Hyeong Pil Kim ◽  
Fabio Kurt Shneider ◽  
Wilson Jose da Silva ◽  
...  

We propose that 1 + 1 + 1 triple-junction solar cells can provide an increased efficiency, as well as a higher open circuit voltage, compared to tandem solar cells.


2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


2009 ◽  
Vol 1153 ◽  
Author(s):  
Guozhen Yue ◽  
Laura Sivec ◽  
Baojie Yan ◽  
Jeff Yang ◽  
Subhendu Guha

AbstractWe report our recent progress on nc-Si:H single-junction and a-Si:H/nc-Si:H/nc-Si:H triple-junction cells made by a modified very-high-frequency (MVHF) technique at deposition rates of 10-15 Å/s. First, we studied the effect of substrate texture on the nc-Si:H single-junction solar cell performance. We found that nc-Si:H single-junction cells made on bare stainless steel (SS) have a good fill factor (FF) of ˜0.73, while it decreased to ˜0.65 when the cells were deposited on textured Ag/ZnO back reflectors. The open-circuit voltage (Voc) also decreased. We used dark current-voltage (J-V), Raman, and X-ray diffraction (XRD) measurements to characterize the material properties. The dark J-V measurement showed that the reverse saturated current was increased by a factor of ˜30 when a textured Ag/ZnO back reflector was used. Raman results revealed that the nc-Si:H intrinsic layers in the two solar cells have similar crystallinity. However, they showed a different crystallographic orientation as indicated in XRD patterns. The material grown on Ag/ZnO has more random orientation than that on SS. These experimental results suggested that the deterioration of FF in nc-Si:H solar cells on textured Ag/ZnO was caused by poor nc-Si:H quality. Based on this study, we have improved our Ag/ZnO back reflector and the quality of nc-Si:H component cells and achieved an initial and stable active-area efficiencies of 13.4% and 12.1%, respectively, in an a-Si:H/nc-Si:H/nc-Si:H triple-junction cell.


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