scholarly journals Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

2015 ◽  
Vol 24 (4) ◽  
pp. 517-532 ◽  
Author(s):  
Sergiu Viorel Spataru ◽  
Dezso Sera ◽  
Peter Hacke ◽  
Tamas Kerekes ◽  
Remus Teodorescu
Keyword(s):  
Dark Current ◽  
Crystalline Silicon ◽  
Fault Identification ◽  
Current Voltage ◽  
Pv Modules ◽  
Current Voltage Characteristics ◽  
Complementary Analysis

scholarly journals Understanding Dark Current-Voltage Characteristics in Metal-Halide Perovskite Single Crystals

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Elisabeth A. Duijnstee ◽  
Vincent M. Le Corre ◽  
Michael B. Johnston ◽  
L. Jan Anton Koster ◽  
Jongchul Lim ◽  
...  
Keyword(s):  
Single Crystals ◽  
Dark Current ◽  
Metal Halide ◽  
Metal Halide Perovskite ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Halide Perovskite

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Influence of Nickel Film Thicknesses on Dark Current-Voltage Characteristics of Silicon Solar Cells

2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Nickel Silicide ◽  
Nickel Film ◽  
Silicon Solar Cells ◽  
Voltage Range ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Current Voltage Characteristics

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.

The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors

2003 ◽  
Vol 251 (1-4) ◽  
pp. 782-786 ◽  
Author(s):  
X. Zhang ◽  
A.Z. Li ◽  
C. Lin ◽  
Y.L. Zheng ◽  
G.Y. Xu ◽  
...  
Keyword(s):  
Dark Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

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