Direct evidence of enhanced chlorine segregation at grain boundaries in polycrystalline CdTe thin films via three-dimensional TOF-SIMS imaging

2014 ◽  
Vol 23 (7) ◽  
pp. 838-846 ◽  
Author(s):  
Steven P. Harvey ◽  
Glenn Teeter ◽  
Helio Moutinho ◽  
Mowafak M. Al-Jassim
Author(s):  
N. Rozhanski ◽  
V. Lifshitz

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.


2019 ◽  
Author(s):  
D.O. Alikin ◽  
Y. Fomichov ◽  
S.P. Reis ◽  
A.S. Abramov ◽  
D.S. Chezganov ◽  
...  

2017 ◽  
Vol 9 (5) ◽  
pp. 05016-1-05016-5 ◽  
Author(s):  
Y. P. Saliy ◽  
◽  
L. I. Nykyruy ◽  
R. S. Yavorskyi ◽  
S. Adamiak ◽  
...  

2021 ◽  
Author(s):  
Arindam Mondal ◽  
Akash Lata ◽  
Aarya Prabhakaran ◽  
Satyajit Gupta

Application of three-dimensional (3D)-halide perovskites (HaP) in photocatalysis encourages the new exercise with two-dimensional (2D) HaP based thin-films for photocatalytic degradation of dye. The reduced dimensionality to 2D-HaPs, with a...


2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.


1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


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