Organosoluble, low-dielectric-constant fluorinated polyimides based on 9,9-bis[4-(4-amino-2-trifluoromethyl- phenoxy)phenyl]xanthene

2011 ◽  
Vol 60 (8) ◽  
pp. 1185-1193 ◽  
Author(s):  
Shouri Sheng ◽  
Daoping Li ◽  
Tianqi Lai ◽  
Xiaoling Liu ◽  
Caisheng Song
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fluorinated Polyimides

Photosensitive fluorinated polyimides with a low dielectric constant based on reaction development patterning

2003 ◽  
Vol 41 (6) ◽  
pp. 861-871 ◽  
Author(s):  
Tomoko Miyagawa ◽  
Takafumi Fukushima ◽  
Toshiyuki Oyama ◽  
Takao Iijima ◽  
Masao Tomoi
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fluorinated Polyimides

Preparation and Properties of Polyisoimides as a Highly Dimensionally Stable Polyimide Precursor with Low Dielectric Constant

1997 ◽  
Vol 9 (3) ◽  
pp. 333-344 ◽  
Author(s):  
Hiroshi Seino ◽  
Osamu Haba ◽  
Amane Mochizuki ◽  
Masahiro Yoshioka ◽  
Mitsuru Ueda
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Isomerization Reaction ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fluorinated Polyimides ◽  
Wide Range ◽  
Biphenyltetracarboxylic Dianhydride ◽  
Polyimide Precursor ◽  
Dipolar Aprotic Solvents

Fluorinated polyimides (PIs) with low dielectric constant and high dimensional stability have been developed using polyisoimides (PIIs) as a polyimide precursor. The PIIs were prepared by the ring-opening polyaddition of the dianhydrides pyromellitic dianhydride, biphenyltetracarboxylic dianhydride and 4, 4′-hexafluoropropylidenedi(phthalic anhydride) with the diamines 2, 2′-dimethylbenzidine and 2, 2′-bis(trifluoromethyl)benzidine, followed by treatment with trifluoroacetic anhydride/triethylamine or dicyclohexylcarbodiimide in N;N-dimethylacetamide. The PIIs were soluble in a wide range of solvents including dipolar aprotic solvents, cyclohexanone and tetrahydrofuran at room temperature, and easy to convert to corresponding PIs by high thermal treatment. The resulting PIs showed low dielectric constants of less than 3 at 1 MHz as well as low CTEs. Furthermore, during the isomerization reaction, migration of copper in the PI film was hardly observed.

Synthesis and characterization of highly optical transparent and low dielectric constant fluorinated polyimides

Polymer ◽  
2009 ◽  
Vol 50 (25) ◽  
pp. 6009-6018 ◽  
Author(s):  
Liming Tao ◽  
Haixia Yang ◽  
Jingang Liu ◽  
Lin Fan ◽  
Shiyong Yang
Keyword(s):  
Dielectric Constant ◽  
Synthesis And Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Fluorinated Polyimides

Low Dielectric Constant Fluorinated Polyimides for Interlayer Dielectric Applications

1997 ◽  
Vol 476 ◽  
Author(s):  
John Pellerin ◽  
Robert Fox ◽  
Huei-Min Ho
Keyword(s):  
Dielectric Constant ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Metal Structures ◽  
Single Level ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Low K

AbstractThis paper presents the results of development, characterization and integration screening of low dielectric constant (low k) fluorinated polyimides for interlayer dielectric applications. Evolution of these materials has progressed with the intent of improving fundamental thin film properties, such as thermal stress behavior, modulus, CTE, and dielectric constant. Further refinements to fluorinated polyimides have been to improve their process compatibility and integration characteristics, primarily in the area of deep sub-micron gap filling. The avenues taken to attain these objectives will be illustrated.Subsequent integration of low k fluorinated polyimides has been achieved for a completed single-level metal BEOL test vehicle to highlight the impacts of the film's adhesion, mechanical and thermomechanical properties. In addition, the completed fluorinated polyimide single-level metal structures have been used to characterize electrical performance in contrast to single-level metal structures with TEOS dielectric. Intralevel capacitance and leakage current have been measured with dual comb and serpentine structures. Modeling has been applied to verify dielectric constant in submicron geometries from the capacitance measurements.

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