Laser printing of conductive tracks with extremely low electrical resistance on polymer-carbon nanotubes composite: An optimization study of laser setup parameters by design of experiment approach

2017 ◽  
Vol 58 (9) ◽  
pp. 1485-1493
Author(s):  
Andrea Caradonna ◽  
Francesca Tagliafierro ◽  
Antonino Veca ◽  
Claudio Badini
2020 ◽  
Vol 11 (6) ◽  
pp. 1383-1389
Author(s):  
A. V. Shchegolkov ◽  
V. S. Yagubov ◽  
A. V. Shchegolkov ◽  
N. R. Memetov

2012 ◽  
Vol 51 ◽  
pp. 105103 ◽  
Author(s):  
Tohru Watanabe ◽  
Fumiaki Tomioka ◽  
Satoshi Ishii ◽  
Shunsuke Tsuda ◽  
Takahide Yamaguchi ◽  
...  

2012 ◽  
Vol 26 (21) ◽  
pp. 1250136 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
MOHAMMAD HOSSEIN SHEIKHI

We present a model to understand the effect of temperature on the electrical resistance of individual semiconducting single wall carbon nanotubes (s-SWCNTs) of various diameters under various electric fields. The temperature dependence of the resistance of s-SWCNTs and metallic SWCNTs (m-SWCNTs) are compared. These results help us to understand the temperature dependence of the resistance of SWCNTs network. We experimentally examine the temperature dependence of the resistance of random networks of SWCNTs, prepared by dispersing CNTs in ethanol and drop-casting the solution on prefabricated metallic electrodes. Examining various samples with different electrode materials and spacings, we find that the dominant resistance in determination of the temperature dependence of resistance of the network is the resistance of individual tubes, rather than the tube–tube resistance or tube–metal contact resistance. It is also found that the tube–tube resistance depends on the electrode spacing and it is more important for larger electrode spacings. By applying high electric field to burn the all-metallic paths of the SWCNTs network, the temperature dependence of the resistance of s-SWCNTs is also examined. We also investigate the effect of acid treatment of CNTs on the temperature dependence of the resistance of SWCNTs and also multi-wall CNTs (MWCNTs) networks.


2016 ◽  
Vol 166 ◽  
pp. 10-14 ◽  
Author(s):  
Juan Bernal-Martínez ◽  
Alberto Seseña-Rubfiaro ◽  
Rafael Godínez-Fernández ◽  
Alfredo Aguilar-Elguezabal

2014 ◽  
Vol 1752 ◽  
pp. 111-116
Author(s):  
S. Chandrasekar ◽  
K.S.V. Santhanam ◽  
Y. Yue ◽  
K. Kalaiazagan ◽  
L. Fuller

ABSTRACTA nano thermal sensor was made by depositing carbon nanotubes from a medium containing a) methylene chloride b)sodium dodecyl sulfate and c) Baytron-P (polymer) assisted sodium dodecyl sulfate. The nano thermal sensors showed d.c. electrical resistance as independent of temperature when the sensors were made by procedures (a) or (b). The electrical resistivity in both the situations has been independent of temperature. When the nanosensor is made with carbon nanotubes by assisted method (c), the d.c. electrical resistance decreased with temperature. The negative temperature coefficient (TCR) is manifested in the semiconducting property of the active material. The sensor behavior is reproducible and varies linearly with temperature. The nanosensor made by non assisted carbon nanotube showed zero TCR. This is probably the first instance of assisted thermal sensor made with single walled carbon nanotubes.


2009 ◽  
Vol 1204 ◽  
Author(s):  
Letian Lin ◽  
Lu-Chang Qin ◽  
Sean Washburn ◽  
Scott Paulson

AbstractThe properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.


2012 ◽  
Vol 51 ◽  
pp. 05ED01 ◽  
Author(s):  
Tatsuro Saito ◽  
Makoto Wada ◽  
Atsunobu Isobayashi ◽  
Yuichi Yamazaki ◽  
Masayuki Katagiri ◽  
...  

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