Electrical characteristics of coplanar waveguide devices incorporating nonlinear dielectric thin films of SrTiO3 and Sr0.5Ba0.5TiO3

1995 ◽  
Vol 9 (6) ◽  
pp. 306-310 ◽  
Author(s):  
A. T. Findikoglu ◽  
Q. X. Jia ◽  
D. W. Reagor ◽  
X. D. Wu
Keyword(s):  
Thin Films ◽  
Coplanar Waveguide ◽  
Electrical Characteristics ◽  
Dielectric Thin Films ◽  
Nonlinear Dielectric ◽  
Waveguide Devices

Tunable microwave mixing in nonlinear dielectric thin films of SrTiO3 and Sr0.5Ba0.5TiO3

1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Dielectric Thin Films ◽  
Nonlinear Dielectric ◽  
Tunable Microwave

Nonlinear Dielectric Thin Films For Active and Electrically Tunable Microwave Devices

1995 ◽  
Vol 401 ◽  
Author(s):  
A. T. Findikoglu ◽  
Q. X. Jia ◽  
D. W. Reagor ◽  
X. D. Wu
Keyword(s):  
Coplanar Waveguide ◽  
Phase Shifters ◽  
Microwave Devices ◽  
Device Structure ◽  
Dielectric Thin Films ◽  
Electrode Layer ◽  
Dc Voltage ◽  
Nonlinear Dielectric ◽  
Tunable Resonators ◽  
Waveguide Device

AbstractWe have prepared electrically tunable and active microwave devices incorporating (superconducting YBa2Cu3O7-x)/(nonlinear dielectric SrTiO3) or (normal metal Au)/(nonlinear dielectric Sr0.5Ba0.5TiO3) bilayers. The dielectric layer thickness for these samples varied between 0.5 μm and 2 μm. The top electrode layer for each sample was patterned into a coplanar waveguide device structure. We have configured these devices as voltage-tunable resonators, voltage-tunable phase shifters, voltage-tunable mixers, and voltage-tunable filters. Under dc voltage bias, these prototype devices have exhibited up to 30% resonant frequency modulation, about 1°/mm-GHz phase shift, more than 40 dB change in mixed microwave power, and finetunable symmetric filter profile with less than 2% bandwidth and more than 15% adaptive range.

Method for measuring polarity-inverted layered structure in dielectric thin films using scanning nonlinear dielectric microscopy

2016 ◽  
Vol 498 (1) ◽  
pp. 47-51 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Koshiro Terada ◽  
Hiroaki Nishikawa ◽  
Takahiko Yanagitani ◽  
Yasuo Cho
Keyword(s):  
Thin Films ◽  
Layered Structure ◽  
Dielectric Thin Films ◽  
Nonlinear Dielectric

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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