scholarly journals An analytical approach to the HEMT noise wave model parameter determination

2017 ◽  
Vol 14 (1) ◽  
pp. 35-49
Author(s):  
Vladica Djordjevic ◽  
Zlatica Marinkovic ◽  
Olivera Pronic-Rancic ◽  
Vera Markovic
Keyword(s):  
Analytical Approach ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Intrinsic Noise ◽  
Parameter Determination ◽  
Second Step ◽  
Model Parameters ◽  
High Electron ◽  
Noise Parameters

This paper presents an analytical approach to determination of the noise wave model parameters for a high electron-mobility transistor working under different temperature and frequency conditions. The presented approach is composed of two steps and provides more efficient determination of these parameters than in the case of optimization procedures commonly applied for that purpose in circuit simulators. The first step is extraction of the noise parameters of transistor intrinsic circuit from the measured noise parameters of whole transistor using an analytical noise de-embedding procedure. The second step is calculation of the noise wave model parameters from the de-embedded intrinsic noise parameters using existing formulas. The accuracy of the presented approach is validated in a wide frequency and temperature range by comparison of the transistor noise parameters simulated for the determined noise wave model parameters with the measured noise parameters.

scholarly journals COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS

2017 ◽  
Vol 16 (2) ◽  
pp. 117
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Olivera Pronić-Rančić
Keyword(s):  
Comparative Analysis ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Extraction Methods ◽  
Model Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling

The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures

2015 ◽  
Vol 1105 ◽  
pp. 99-104
Author(s):  
N. Mohankumar ◽  
A. Mohanbabu ◽  
S. Baskaran ◽  
P. Anandan ◽  
N. Anbuselvan ◽  
...  
Keyword(s):  
Circuit Design ◽  
Carrier Density ◽  
Full Range ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Physical Parameters ◽  
Model Parameters ◽  
Gate Length ◽  
High Electron ◽  
Proposed Model

In this paper, we propose a physics-based analytical model of novel InAlN/GaN High Electron Mobility Transistor (HEMT) by considering the quasi-triangular quantum well with minimal empirical parameters. The derived model is compared for different short and long gate length devices. The results are calibrated and verified with experimental data over a full range for gate and drain applied voltages. Significant improvement in ns, drain Current, and transconductance are observed for InAlN HEMT making it suitable for nanoscale and microwave analysis in circuit design. Therefore, the proposed model can deal directly with device/physical parameters, and it can be expressed by a very small number of model parameters.

scholarly journals On the Application of the Particle Swarm Optimization to the Inverse Determination of Material Model Parameters for Cutting Simulations

Modelling ◽  
2021 ◽  
Vol 2 (1) ◽  
pp. 129-148
Author(s):  
Marvin Hardt ◽  
Deepak Jayaramaiah ◽  
Thomas Bergs
Keyword(s):  
Particle Swarm Optimization ◽  
Particle Swarm ◽  
Material Model ◽  
Cutting Process ◽  
Parameter Determination ◽  
Model Parameters ◽  
Swarm Optimization ◽  
Cutting Simulations ◽  
Number Of Iterations

The manufacturing industry is confronted with increasing demands for digitalization. To realize a digital twin of the cutting process, an increase of the model reliability of the virtual representation becomes necessary. Thereby, different models are required to represent the experimental behavior of the workpiece material or frictional interactions. One of the most utilized material models is the Johnson–Cook material model. The material model parameters are determined either by conventional or by non-conventional material tests, or inversely from the cutting process. However, the inverse parameter determination, where the model parameters are iteratively modified until a sufficient agreement between experimental and numerical results is reached, is not robust and requires a high number of iterations. In this paper, an approach for the inverse determination of material model parameters based on the Particle Swarm Optimization (PSO) is presented. The approach was investigated by the inverse re-identification of an initial parameter set. The conducted investigations showed that a material model parameter set can be determined within a small number of iterations. Thereby, the determined material model parameters resulted in deviations of approximately 1% in comparison to their target values. It was shown that the PSO is suitable for the inverse material parameter determination from cutting simulations.

Automated Parameter Determination of Advanced Constitutive Models

2005 ◽  
Author(s):  
Syed M. Rahman ◽  
Tasnim Hassan ◽  
S. Ranji Ranjithan
Keyword(s):  
Heuristic Search ◽  
Constitutive Models ◽  
Cyclic Stress ◽  
Cyclic Plasticity ◽  
Parameter Determination ◽  
Model Parameters ◽  
Optimization Approach ◽  
Analysis And Design ◽  
Chaboche Model

Parameter determination of advanced cyclic plasticity models which are developed for simulation of cyclic stress-strain and ratcheting responses is complex. This is mainly because of the large number of model parameters which are interdependent and three or more experimental responses are used in parameter determination. Hence the manual trial and error approach becomes quite tedious and time consuming for determining a reasonable set of parameters. Moreover, manual parameter determination for an advanced plasticity model requires in-depth knowledge of the model and experience with its parameter determination. These are few of the primary reasons for advanced cyclic plasticity models not being widely used for analysis and design of fatigue critical structures. These problems could be overcome through developing an automated parameter optimization system using heuristic search technique (e.g. genetic algorithm). This paper discusses the development of such an automatic parameter determination scheme for improved Chaboche model developed by Bari and Hassan [4]. A new stepped GA optimization approach which is found to be more efficient over the conventional GA approach in terms of fitness quality and optimization time is presented.

scholarly journals Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

2010 ◽  
Vol 2 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Marcus Gonschorek ◽  
Jean-Francois Carlin ◽  
Eric Feltin ◽  
Marcel Py ◽  
Nicolas Grandjean
Keyword(s):  
Dielectric Constant ◽  
Charge Density ◽  
Balance Equation ◽  
High Electron Mobility Transistor ◽  
Surface Barrier ◽  
High Electron ◽  
Charge Balance ◽  
Electrical Parameters ◽  
Cv Measurements

This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance–voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6 × 1013 cm−2 for lattice-matched (LM) heterostructures and barrier thickness of 14 nm, beyond 2 A/mm saturation currents, above 100 GHz operation for heterostructures grown on Si (111) with gate length of 0.1 µm. Despite these striking experimental results, a consistent determination of the most important electrical parameters, namely polarization sheet charge density, surface potential, and dielectric constant of the alloy are still missing. By setting up the correct charge balance equation, these parameters can unambiguously be determined. For instance, in the case of nearly LM Al0.85In0.15N these parameters amount to σAl0.85In0.15N/GaN ~ 3.7 × 1017 m−2, eΦS ~ 3 eV and ɛAl0.85In0.15N ~11.2, for the charge density, the surface barrier potential, and the dielectric constant, respectively.

scholarly journals Mathematical Modelling and Parameter Determination of Reluctance Synchronous Motor with Squirrel Cage

2010 ◽  
Vol 61 (6) ◽  
pp. 357-364 ◽  
Author(s):  
Peter Hudák ◽  
Valéria Hrabovcová
Keyword(s):  
Mathematical Model ◽  
Mathematical Modelling ◽  
Synchronous Motor ◽  
Parameter Determination ◽  
Model Parameters ◽  
Squirrel Cage ◽  
Rotor Cage

Mathematical Modelling and Parameter Determination of Reluctance Synchronous Motor with Squirrel Cage The paper provides an analysis of reluctance synchronous motor (RSM) with asymmetrical rotor cage. Its performances during its starting up is investigated. A mathematical model is created on the basis of detailed investigation of model parameters. The RSM starting up by switching it directly across the line was simulated and verified by measurements.

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