Free-carrier and thermal grating effects in gallium phosphide

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

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LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1983428 ◽

1983 ◽

Vol 44 (C4) ◽

pp. C4-233-C4-241

Author(s):

B. Hamilton ◽

A. R. Peaker ◽

D. R. Wight

Keyword(s):

Gallium Phosphide ◽

Deep Level

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KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989825 ◽

1989 ◽

Vol 50 (C8) ◽

pp. C8-141-C8-146

Author(s):

A. GAUSSMANN ◽

W. DRACHSEL ◽

J. H. BLOCK

Keyword(s):

Gallium Phosphide ◽

Field Evaporation ◽

Kinetics Of

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Visible Laser Probing (VLP) with GaP Solid Immersion Lens Demonstrating 110 nm Resolution in Common Laser Probing Applications

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0027 ◽

2016 ◽

Author(s):

Travis Eiles ◽

Patrick Pardy

Keyword(s):

Gallium Phosphide ◽

Fault Isolation ◽

Solid Immersion Lens ◽

Laser Probing ◽

Isolation Methods ◽

Visible Laser ◽

High Level ◽

Industry Needs ◽

Diameter Reduction ◽

Better Than

Abstract This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.

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