SPICE modeling for RF kink effect in body contacted PD‐SOI nMOSFETs

Theoretical analysis of kink effect in C-V characteristics of Indium-implanted NMOS capacitors

IEEE Electron Device Letters ◽

10.1109/55.650340 ◽

1998 ◽

Vol 19 (1) ◽

pp. 19-22 ◽

Cited By ~ 12

Author(s):

P. Bouillon ◽

T. Skotnicki

Keyword(s):

Theoretical Analysis ◽

Kink Effect

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Kink Effect in ${\rm S}_{22}$ for GaN and GaAs HEMTs

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2015.2409989 ◽

2015 ◽

Vol 25 (5) ◽

pp. 301-303 ◽

Cited By ~ 16

Author(s):

Giovanni Crupi ◽

Antonio Raffo ◽

Alina Caddemi ◽

Giorgio Vannini

Keyword(s):

Kink Effect

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Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS

1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) ◽

10.1109/soi.1998.723158 ◽

2002 ◽

Cited By ~ 7

Author(s):

D. Chang ◽

S. Veeraraghavan ◽

M. Mendicino ◽

M. Rashed ◽

D. Connelly ◽

...

Keyword(s):

Floating Body ◽

Kink Effect ◽

Soi Cmos

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Is there a kink effect in FDSOI MOSFETs?

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/ulis.2017.7962564 ◽

2017 ◽

Cited By ~ 3

Author(s):

H. J. Park ◽

M. Bawedin ◽

K. Sasaki ◽

J-A. Martino ◽

S. Cristoloveanu

Keyword(s):

Kink Effect

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A Numerical Large Signal Model for Kink Effect on AlGaN/GaN HEMT

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) ◽

10.1109/icmmt.2018.8563838 ◽

2018 ◽

Author(s):

Hou Yanfei ◽

Liu Jun ◽

Liu Yijing ◽

Lv Yuanjie ◽

Yu Weihua

Keyword(s):

Large Signal ◽

Signal Model ◽

Gan Hemt ◽

Kink Effect

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Elimination of kink effect in fully depleted complementary buried-channel SOL MOSFET (FD CBCMOS) based on silicon direct bonding technology

IEEE Electron Device Letters ◽

10.1109/55.75725 ◽

1991 ◽

Vol 12 (3) ◽

pp. 101-103 ◽

Cited By ~ 6

Author(s):

Qin-Yi Tong ◽

Xiao-Li Xu ◽

Hui-Zhen Zhang

Keyword(s):

Fully Depleted ◽

Buried Channel ◽

Kink Effect ◽

Bonding Technology

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Analytical Modeling of the Triggering Drain Voltage at the Onset of the Kink Effect for PD SOI NMOS

2006 25th International Conference on Microelectronics ◽

10.1109/icmel.2006.1650964 ◽

2006 ◽

Cited By ~ 1

Author(s):

M. Sarajlic ◽

R. Ramovic

Keyword(s):

Analytical Modeling ◽

Drain Voltage ◽

Kink Effect

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Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi–Insulating Substrates

MRS Proceedings ◽

10.1557/proc-640-h4.4 ◽

2000 ◽

Vol 640 ◽

Cited By ~ 3

Author(s):

Nabil Sghaier ◽

Abdel K. Souifi ◽

Jean-Marie Bluet ◽

Manuel Berenguer ◽

Gérard Guillot ◽

...

Keyword(s):

Gate Voltage ◽

Frequency Dispersion ◽

Buffer Layers ◽

Si Substrate ◽

Substrate Interface ◽

Si Substrates ◽

Kink Effect ◽

Parasitic Effect ◽

Output Characteristics ◽

Output Conductance

ABSTRACTThe aim of this work is to study the origin of parasitic phenomena in the output characteristics of 4H-SiC MESFETs on semi-insulating (SI) substrates with various buffer layers. Ids-Vds measurements as a function of temperature have first been performed. Different parasitic effects such as kink effect, hysteresis effect when the gate voltage is successively increased or decreased, or changes in the output characteristics after a high drain polarization are presented. Random Telegraph Signal (RTS) measurements and frequency dispersion of the output conductance have next been realized. From the obtained results, we propose that the parasitic effect on the output characteristics are correlated with the presence of deep levels located near the semi -insulating substrate interface. The main observed trap is tentatively attributed to the presence of Vanadium in the SI substrate.

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