Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs

1996 ◽  
Vol 17 (10) ◽  
pp. 473-475 ◽  
Author(s):  
M.H. Somerville ◽  
J.A. del Alamo ◽  
W. Hoke
Keyword(s):  
Impact Ionization ◽  
Kink Effect

Relation between Kink Effect and Impact Ionization Effect in SOI MOSFETs with Body Terminal

1996 ◽  
Author(s):  
T. Matsumoto ◽  
Y. Kudoh ◽  
N. Terao ◽  
J. Kim ◽  
M. Koyanagi
Keyword(s):  
Impact Ionization ◽  
Kink Effect ◽  
Ionization Effect

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

scholarly journals Temperature dependence of impact ionization in GaAs

2003 ◽  
Vol 50 (10) ◽  
pp. 2027-2031 ◽  
Author(s):  
C. Groves ◽  
R. Ghin ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization

Microwave modulator utilizing impact ionization in bulk germanium at 4.2°K

1965 ◽  
Vol 53 (9) ◽  
pp. 1263-1263
Author(s):  
W.W. Heinz ◽  
S. Okwit
Keyword(s):  
Impact Ionization

scholarly journals Few Body Effects in the Electron and Positron Impact Ionization of Atoms

Atoms ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 33
Author(s):  
R.I. Campeanu ◽  
Colm T. Whelan
Keyword(s):  
Electron Impact ◽  
Cross Sections ◽  
Differential Cross ◽  
Impact Ionization ◽  
Inert Gas ◽  
Interference Effects ◽  
Positron Impact ◽  
Competing Interactions ◽  
Energy Sharing

Triple differential cross sections (TDCS) are presented for the electron and positron impact ionization of inert gas atoms in a range of energy sharing geometries where a number of significant few body effects compete to define the shape of the TDCS. Using both positrons and electrons as projectiles has opened up the possibility of performing complementary studies which could effectively isolate competing interactions that cannot be separately detected in an experiment with a single projectile. Results will be presented in kinematics where the electron impact ionization appears to be well understood and using the same kinematics positron cross sections will be presented. The kinematics are then varied in order to focus on the role of distortion, post collision interaction (pci), and interference effects.

scholarly journals Low-energy electron-impact ionization of helium

1998 ◽  
Vol 57 (5) ◽  
pp. R3161-R3164 ◽  
Author(s):  
Igor Bray ◽  
Dmitry V. Fursa ◽  
J. Röder ◽  
H. Ehrhardt
Keyword(s):  
Electron Impact ◽  
Impact Ionization ◽  
Electron Impact Ionization ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron
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