Genetic algorithm initialized artificial neural network based temperature dependent
            small‐signal
            modeling technique for
            GaN
            high electron mobility transistors

Anwar Jarndal; Saddam Husain; Mohammad Hashmi

doi:10.1002/mmce.22542

Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22542 ◽

2021 ◽

Vol 31 (3) ◽

Author(s):

Anwar Jarndal ◽

Saddam Husain ◽

Mohammad Hashmi

Keyword(s):

Neural Network ◽

Genetic Algorithm ◽

Artificial Neural Network ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Modeling

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Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.4935542 ◽

2015 ◽

Vol 118 (19) ◽

pp. 195702 ◽

Cited By ~ 5

Author(s):

He Guan ◽

Hongliang Lv ◽

Hui Guo ◽

Yuming Zhang

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

High Electron ◽

Small Signal ◽

Signal Modeling ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Modeling

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Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

Solid-State Electronics ◽

10.1016/j.sse.2015.10.001 ◽

2016 ◽

Vol 115 ◽

pp. 12-16 ◽

Cited By ~ 13

Author(s):

A.K. Sahoo ◽

N.K. Subramani ◽

J.C. Nallatamby ◽

L. Sylvain ◽

C. Loyez ◽

...

Keyword(s):

Silicon Carbide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Loss Mechanism ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Silicon Carbide Substrate ◽

Small Signal Modeling

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Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/8/085002 ◽

2010 ◽

Vol 25 (8) ◽

pp. 085002 ◽

Cited By ~ 4

Author(s):

S-W Moon ◽

J-H Oh ◽

Y-H Baek ◽

M Han ◽

J-K Rhee ◽

...

Keyword(s):

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Signal Modeling ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Modeling ◽

Sensitive Parameters

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A DC and small signal model for high electron mobility transistors

[1993] Proceedings of the Tenth Biennial University/Government/Industry Microelectronics Symposium ◽

10.1109/ugim.1993.297017 ◽

2002 ◽

Author(s):

H. Ahn ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Model

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An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2648 ◽

2019 ◽

Vol 32 (6) ◽

Author(s):

Mohammad N. Khan ◽

Umer F. Ahmed ◽

Muhammad M. Ahmed ◽

Saif Rehman

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22112 ◽

2019 ◽

Vol 30 (4) ◽

Cited By ~ 2

Author(s):

Ahmad Khusro ◽

Saddam Husain ◽

Mohammad S. Hashmi ◽

Abdul Quaiyum Ansari

Keyword(s):

Neural Network ◽

Artificial Neural Network ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Behavioral Modeling ◽

Modeling Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Artificial Neural

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Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2905813 ◽

2008 ◽

Vol 155 (6) ◽

pp. H443 ◽

Cited By ~ 3

Author(s):

Li-Yang Chen ◽

Shiou-Ying Cheng ◽

Kuei-Yi Chu ◽

Tsung-Han Tsai ◽

Tzu-Pin Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Cited By ~ 2

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2409479 ◽

2007 ◽

Vol 154 (3) ◽

pp. H134 ◽

Cited By ~ 4

Author(s):

Po-Hsien Lai ◽

Rong-Chau Liu ◽

Ssu-I Fu ◽

Yan-Ying Tsai ◽

Ching-Wen Hung ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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