A comparison of three‐dimensional electromagnetic and RC parasitic extraction analysis of mm‐wave on‐chip passives in SiGe BiCMOS low‐noise amplifiers

2019 ◽  
Vol 30 (2) ◽  
Author(s):  
Flavien Sagouo Minko ◽  
Tinus Stander
Keyword(s):  
Three Dimensional ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Parasitic Extraction ◽  
Sige Bicmos ◽  
On Chip

ON-CHIP INDUCTORS OPTIMIZATION FOR ULTRA WIDE BAND LOW NOISE AMPLIFIERS

2011 ◽  
Vol 20 (07) ◽  
pp. 1231-1242 ◽  
Author(s):  
J. DEL PINO ◽  
SUNIL L. KHEMCHANDANI ◽  
ROBERTO DÍAZ-ORTEGA ◽  
R. PULIDO ◽  
H. GARCÍA-VÁZQUEZ
Keyword(s):  
Quality Factor ◽  
Noise Figure ◽  
Impedance Matching ◽  
Broad Band ◽  
Wide Band ◽  
Design Guidelines ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Integrated Inductor ◽  
On Chip

In this work, the influence of the inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have been used to model the integrated inductor broad band response. The influence of the quality factor on LNA performance of the inductors that compound the impedance matching networks, inductive degeneration and broadband load has been studied, obtaining design guidelines for optimizing the amplifier gain flatness. Using this guidelines, an LNA with wideband input matching, shunt-peaking load, and an output buffer was designed. Using Austria Mikro Systems BiCMOS 0.35 m process, a prototype has been fabricated achieving the following measured specifications: maximum gain of 12.5 dB at 3.4 GHz with a -3 dB bandwidth of 1.7–5.3 GHz, noise figure from 4.3 to 5.2 dB, and unity gain at 9.4 GHz.

scholarly journals A New Fractal-Based Design of Stacked Integrated Transformers

2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Goran Stojanović ◽  
Milan Radovanović ◽  
Vasa Radonić
Keyword(s):  
Integrated Circuits ◽  
Mobile Communications ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Radio Frequency Integrated Circuits ◽  
Band Frequency ◽  
Electromagnetic Simulations ◽  
On Chip ◽  
Silicon Based

Silicon-based radio-frequency integrated circuits are becoming more and more competitive in wide-band frequency range. An essential component of these ICs is on-chip (integrated) transformer. It is widely used in mobile communications, microwave integrated circuits, low-noise amplifiers, active mixers, and baluns. This paper deals with the design, simulation, and analysis of novel fractal configurations of the primary and secondary coils of the integrated transformers. Integrated stacked transformers, which use fractal curves (Hilbert, Peano, and von Koch) to form the primary and secondary windings, are presented. In this way, the occupied area on the chip is lower and a number of lithographic processes are decreased. The performances of the proposed integrated transformers are investigated with electromagnetic simulations up to 20 GHz. The influence of the order of fractal curves and the width of conductive lines on the inductance and quality factor is also described.

scholarly journals A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1600
Author(s):  
J. del Pino ◽  
Sunil L. Khemchandani ◽  
D. Galante-Sempere ◽  
C. Luján-Martínez
Keyword(s):  
Power Consumption ◽  
Second Generation ◽  
Low Cost ◽  
Low Frequency ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Current Conveyors ◽  
Compact Size ◽  
Sige Bicmos ◽  
Controlled Current Conveyors

This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors’ knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain is increased, the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The proposed design achieves a tunable gain of 6.7–18 dB and a power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz and can find application in software design radios (SDRs), the low frequency medical implant communication system (MICS) or industrial, scientific, and medical (ISM) bands.

Sub-1-dB and Wideband SiGe BiCMOS Low-Noise Amplifiers for $X$ -Band Applications

2019 ◽  
Vol 66 (4) ◽  
pp. 1419-1430 ◽  
Author(s):  
Can Chliskan ◽  
Ilker Kalyoncu ◽  
Melik Yazici ◽  
Yasar Gurbuz
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
Sige Bicmos
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