scholarly journals Polyacrylonitrile‐carbon Nanotube‐polyacrylonitrile: A Versatile Robust Platform for Flexible Multifunctional Electronic Devices in Medical Applications

2019 ◽  
Vol 304 (6) ◽  
pp. 1900014 ◽  
Author(s):  
Toan Dinh ◽  
Van Dau ◽  
Canh‐Dung Tran ◽  
Tuan‐Khoa Nguyen ◽  
Hoang‐Phuong Phan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electronic Devices ◽  
Medical Applications

Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

2021 ◽  
Author(s):  
Femi Robert
Keyword(s):  
Carbon Nanotube ◽  
Transient Analysis ◽  
Electronic Devices ◽  
Transient Temperature ◽  
Nanoelectronic Devices ◽  
Cu Interconnects ◽  
Electrical Interconnects ◽  
Steady State Temperature ◽  
The Given ◽  
The Continuum

Abstract This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

scholarly journals Influence of Defect Number, Distribution Continuity and Orientation on Tensile Strengths of the CNT-Based Networks: A Molecular Dynamics Study

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Xian Shi ◽  
Xiaoqiao He ◽  
Ligang Sun ◽  
Xuefeng Liu
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Tensile Strength ◽  
Carbon Nanotube ◽  
Electronic Devices ◽  
Underlying Mechanism ◽  
Force Transmission ◽  
Tensile Direction ◽  
Defect Number ◽  
Number Distribution

Abstract Networks based on carbon nanotube (CNT) have been widely utilized to fabricate flexible electronic devices, but defects inevitably exist in these structures. In this study, we investigate the influence of the CNT-unit defects on the mechanical properties of a honeycomb CNT-based network, super carbon nanotube (SCNT), through molecular dynamics simulations. Results show that tensile strengths of the defective SCNTs are affected by the defect number, distribution continuity and orientation. Single-defect brings 0 ~ 25% reduction of the tensile strength with the dependency on defect position and the reduction is over 50% when the defect number increases to three. The distribution continuity induces up to 20% differences of tensile strengths for SCNTs with the same defect number. A smaller arranging angle of defects to the tensile direction leads to a higher tensile strength. Defective SCNTs possess various modes of stress concentration with different concentration degrees under the combined effect of defect number, arranging direction and continuity, for which the underlying mechanism can be explained by the effective crack length of the fracture mechanics. Fundamentally, the force transmission mode of the SCNT controls the influence of defects and the cases that breaking more force transmission paths cause larger decreases of tensile strengths. Defects are non-negligible factors of the mechanical properties of CNT-based networks and understanding the influence of defects on CNT-based networks is valuable to achieve the proper design of CNT-based electronic devices with better performances. Graphical Abstract

On-Chip Electrical Breakdown of Metallic Nanotubes for Mass Fabrication of Carbon-Nanotube-Based Electronic Devices

2008 ◽  
Vol 7 (5) ◽  
pp. 624-627 ◽  
Author(s):  
Gyoung-Ho Buh ◽  
Jea-Ho Hwang ◽  
Eun-Kyoung Jeon ◽  
Hye-Mi So ◽  
Jeong-O Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrical Breakdown ◽  
Electronic Devices ◽  
On Chip

Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

2016 ◽  
Vol 8 (32) ◽  
pp. 20527-20533 ◽  
Author(s):  
Huaping Li ◽  
Hongyu Liu ◽  
Yifan Tang ◽  
Wenmin Guo ◽  
Lili Zhou ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Electronic Devices ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Experimental Study of Damage Mechanism of Carbon Nanotube as Nano-Component of Electronic Devices Under High Current Density

2013 ◽  
Author(s):  
Kazuhiko Sasagawa ◽  
Kazuhiro Fujisaki ◽  
Jun Unuma ◽  
Ryota Azuma
Keyword(s):  
Carbon Nanotube ◽  
Current Density ◽  
High Current Density ◽  
Electronic Devices ◽  
Damage Mechanism ◽  
Cathode Side ◽  
Testing System ◽  
High Current ◽  
Lower Oxygen ◽  
Microscopic Studies

Carbon nanotube (CNT) has a great tolerance to high current density which is a cause of electromigration (EM). Therefore, CNT is expected to use as the materials of nanoscale components of electronic devices. The damage mechanisms of CNT are regarded as the effects of oxidation by Joule heating and/or the EM by high-density electron flows. In this study, we investigated the damage mechanism of CNT structures used as nano-component of electronic devices. An EM acceleration testing system was designed using the CNT structures collected at the gap of thin-film electrodes. The EM tests were conducted under the several kinds of current density conditions and the surrounding environments. An indicator of lifetime was determined by voltage measurements during the acceleration tests and their fracture phenomena were evaluated by means of microscopic observations. As the results, the amounts of lifetime of CNT were longer in the lower oxygen concentrations than in the air condition. In the microscopic studies, it was confirmed that the local evaporation of carbon atoms due to oxidation appeared at the cathode side of the CNT structures under low current density, and the center area of CNT under high current density. Both types of damage morphologies induced by oxidation and EM were observed at the damaged CNT. The results showed the dominant damage mechanism alternated between oxidation and EM depending on current density under oxygen rich conditions.

Carbon Nanotube Based Molecular Electronic Devices

1998 ◽  
Vol 13 (9) ◽  
pp. 2357-2362 ◽  
Author(s):  
Madhu Menon ◽  
Deepak Srivastava
Keyword(s):  
Carbon Nanotubes ◽  
Molecular Dynamics ◽  
Carbon Nanotube ◽  
Electronic Devices ◽  
Tight Binding ◽  
Single Walled Carbon Nanotubes ◽  
Building Blocks ◽  
Local Minima ◽  
Molecular Electronic ◽  
Walled Carbon Nanotubes

Complex three-point junctions of single-walled carbon nanotubes are proposed as building blocks of nanoscale electronic devices. Both T- and Y-junctions, made up of tubes with differing diameters and chiralities, are studied as prototypes. All the proposed complex junctions have been found to be local minima of the total energy on relaxation with a generalized tight-binding molecular dynamics scheme.

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