Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

2016 ◽  
Vol 8 (32) ◽  
pp. 20527-20533 ◽  
Author(s):  
Huaping Li ◽  
Hongyu Liu ◽  
Yifan Tang ◽  
Wenmin Guo ◽  
Lili Zhou ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Electronic Devices ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Ultralow Feeding Gas Flow Guiding Growth of Large-Scale Horizontally Aligned Single-Walled Carbon Nanotube Arrays

Nano Letters ◽  
2007 ◽  
Vol 7 (7) ◽  
pp. 2073-2079 ◽  
Author(s):  
Zhong Jin ◽  
Haibin Chu ◽  
Jinyong Wang ◽  
Jinxing Hong ◽  
Wenchang Tan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Gas Flow ◽  
Nanotube Arrays ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Arrays

Large scale highly organized single-walled carbon nanotube networks for electrical devices

2009 ◽  
Vol 96 (2) ◽  
pp. 373-377 ◽  
Author(s):  
Laila Jaber-Ansari ◽  
Myung Gwan Hahm ◽  
Tae Hoon Kim ◽  
Sivasubramanian Somu ◽  
Ahmed Busnaina ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Electrical Devices ◽  
Carbon Nanotube Networks

Polyaniline/single-walled carbon nanotube composite electronic devices

2004 ◽  
Vol 48 (10-11) ◽  
pp. 2019-2024 ◽  
Author(s):  
P.C. Ramamurthy ◽  
A.M. Malshe ◽  
W.R. Harrell ◽  
R.V. Gregory ◽  
K. McGuire ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electronic Devices ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Composite

scholarly journals Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 83-88
Author(s):  
Huaping Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Large Scale ◽  
Solution Process ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Schottky Type ◽  
P Type ◽  
Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

Large-Scale Fabrication of Aligned Single-Walled Carbon Nanotube Array and Hierarchical Single-Walled Carbon Nanotube Assembly

2004 ◽  
Vol 126 (51) ◽  
pp. 16698-16699 ◽  
Author(s):  
Junbo Gao ◽  
Aiping Yu ◽  
Mikhail E. Itkis ◽  
Elena Bekyarova ◽  
Bin Zhao ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Large Scale ◽  
Nanotube Array ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Array
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