Predicting Raman line shapes from amorphous silicon clusters for estimating short‐range order

Author(s):  
Chanchal Rani ◽  
Manushree Tanwar ◽  
Suchita Kandpal ◽  
Tanushree Ghosh ◽  
Devesh K. Pathak ◽  
...  
1991 ◽  
Vol 69 (11) ◽  
pp. 7656-7659 ◽  
Author(s):  
P. Danesh ◽  
B. Pantchev ◽  
I. Savatinova ◽  
E. Liarokapis ◽  
Y. S. Raptis

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Reitano ◽  
M. G. Grimaldi ◽  
P. Baeri ◽  
E. Bellandi ◽  
A. Borghesi ◽  
...  

ABSTRACTThe transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation in the short range order has been invoked to explain the behavior of the structural changes probed by various techniques. In this work we study the influence of such changes on the optical properties of a-Si in the region of the transition between the relaxed and the unrelaxed states. We show that a progressive variation of the optical constant in the visible-near infrared region upon derelaxation occurs. Therefore, significant modifications of the electron density of state in the region above the optical gap are associated with the changes in the short range order probed by Raman spectroscopy.


2000 ◽  
Vol 80 (10) ◽  
pp. 1857-1868 ◽  
Author(s):  
V. A. Gritsenko, G. Shavalgin, P. A. P

2018 ◽  
Vol 90 (13) ◽  
pp. 8123-8129 ◽  
Author(s):  
Priyanka Yogi ◽  
Manushree Tanwar ◽  
Shailendra K. Saxena ◽  
Suryakant Mishra ◽  
Devesh K. Pathak ◽  
...  

1988 ◽  
Vol 106 (1-3) ◽  
pp. 128-131 ◽  
Author(s):  
J. Fortner ◽  
J.S. Lannin

1998 ◽  
Vol 81 (5) ◽  
pp. 1054-1057 ◽  
Author(s):  
V. Gritsenko ◽  
J. Xu ◽  
R. Kwok ◽  
Y. Ng ◽  
I. Wilson

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