Short‐range order, microstructure and their correlation with light‐induced degradation in hydrogenated amorphous silicon deposited at high growth rates by cathode heating technique

1994 ◽  
Vol 76 (9) ◽  
pp. 5208-5213 ◽  
Author(s):  
S. Chattopadhyay ◽  
S. N. Sharma ◽  
Ratnabali Banerjee ◽  
D. M. Bhusari ◽  
S. T. Kshirsagar ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Short Range ◽  
Short Range Order ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
Range Order ◽  
Hydrogenated Amorphous

Short‐range order and microstructure in hydrogenated amorphous silicon

1991 ◽  
Vol 69 (11) ◽  
pp. 7656-7659 ◽  
Author(s):  
P. Danesh ◽  
B. Pantchev ◽  
I. Savatinova ◽  
E. Liarokapis ◽  
Y. S. Raptis
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Hydrogenated Amorphous

scholarly journals Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma

2001 ◽  
Vol 89 (4) ◽  
pp. 2404-2413 ◽  
Author(s):  
W. M. M. Kessels ◽  
R. J. Severens ◽  
A. H. M. Smets ◽  
B. A. Korevaar ◽  
G. J. Adriaenssens ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Growth Rates ◽  
Hydrogenated Amorphous Silicon ◽  
High Growth ◽  
Hydrogenated Amorphous ◽  
Very High

Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Reitano ◽  
M. G. Grimaldi ◽  
P. Baeri ◽  
E. Bellandi ◽  
A. Borghesi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Structural Changes ◽  
Low Dose ◽  
Near Infrared ◽  
Ion Irradiation ◽  
Infrared Region ◽  
Range Order ◽  
Density Of State

ABSTRACTThe transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation in the short range order has been invoked to explain the behavior of the structural changes probed by various techniques. In this work we study the influence of such changes on the optical properties of a-Si in the region of the transition between the relaxed and the unrelaxed states. We show that a progressive variation of the optical constant in the visible-near infrared region upon derelaxation occurs. Therefore, significant modifications of the electron density of state in the region above the optical gap are associated with the changes in the short range order probed by Raman spectroscopy.

On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon

2004 ◽  
Vol 96 (7) ◽  
pp. 3818-3826 ◽  
Author(s):  
A. H. Mahan ◽  
R. Biswas ◽  
L. M. Gedvilas ◽  
D. L. Williamson ◽  
B. C. Pan
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Hydrogenated Amorphous
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