Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

2005 ◽  
Vol 41 (7) ◽  
pp. 449 ◽  
Author(s):  
W.B. Lanford ◽  
T. Tanaka ◽  
Y. Otoki ◽  
I. Adesida
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Recessed Gate

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

2017 ◽  
Vol 64 (4) ◽  
pp. 1554-1560 ◽  
Author(s):  
Liang He ◽  
Fan Yang ◽  
Liuan Li ◽  
Zijun Chen ◽  
Zhen Shen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Recessed Gate

Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT

2008 ◽  
Vol 51 (6) ◽  
pp. 784-789 ◽  
Author(s):  
Yue Hao ◽  
Chong Wang ◽  
JinYu Ni ◽  
Qian Feng ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Characteristic Analysis ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Recessed Gate

scholarly journals The Study of the Single Event Effect in AlGaN/GaN HEMT Based on a Cascode Structure

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 440
Author(s):  
Yanan Liang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Xuan Wang ◽  
Qian Chen ◽  
...  
Keyword(s):  
Low Voltage ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Track Length ◽  
Single Event ◽  
Single Event Effects ◽  
Heavy Ion Irradiation ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Tcad Simulation

An attractive candidate for space and aeronautic applications is the high-power and miniaturizing electric propulsion technology device, the gallium nitride high electron mobility transistor (GaN HEMT), which is representative of wide bandgap power electronic devices. The cascode AlGaN/GaN HEMT is a common structure typically composed of a high-voltage depletion-mode AlGaN/GaN HEMT and low-voltage enhancement-mode silicon (Si) MOSFET connected by a cascode structure to realize its enhancement mode. It is well known that low-voltage Si MOSFET is insensitive to single event burnout (SEB). Therefore, this paper mainly focuses on the single event effects of the cascode AlGaN/GaN HEMT using technical computer-aided design (TCAD) simulation and heavy-ion experiments. The influences of heavy-ion energy, track length, and track position on the single event effects for the depletion-mode AlGaN/GaN HEMT were studied using TCAD simulation. The results showed that a leakage channel between the gate electrode and drain electrode in depletion-mode AlGaN/GaN HEMT was formed after heavy-ion striking. The enhancement of the ionization mechanism at the edge of the gate might be an important factor for the leakage channel. To further study the SEB effect in AlGaN/GaN HEMT, the heavy-ion test of a cascode AlGaN/GaN HEMT was carried out. SEB was observed in the heavy-ion irradiation experiment and the leakage channel was found between the gate and drain region in the depletion-mode AlGaN/GaN HEMT. The heavy-ion irradiation experimental results proved reasonable for the SEB simulation for AlGaN/GaN HEMT with a cascode structure.

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 187-190 ◽  
Author(s):  
Hideyuki Okita ◽  
Katsuaki Kaifu ◽  
Juro Mita ◽  
Tomoyuki Yamada ◽  
Yoshiaki Sano ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt ◽  
High Transconductance ◽  
Recessed Gate
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