The effect of variable temperature, humidity, and substrate wettability on Gecko ( Gekko gecko ) locomotor performance and behavior

Author(s):  
Bridget E. Ringenwald ◽  
Erin C. Bogacki ◽  
Carla A. Narvaez ◽  
Alyssa Y. Stark
2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Christopher T. Mitchell ◽  
Cem Balda Dayan ◽  
Dirk-M. Drotlef ◽  
Metin Sitti ◽  
Alyssa Y. Stark

AbstractGecko adhesive performance increases as relative humidity increases. Two primary mechanisms can explain this result: capillary adhesion and increased contact area via material softening. Both hypotheses consider variable relative humidity, but neither fully explains the interactive effects of temperature and relative humidity on live gecko adhesion. In this study, we used live tokay geckos (Gekko gecko) and a gecko-inspired synthetic adhesive to investigate the roles of capillary adhesion and material softening on gecko adhesive performance. The results of our study suggest that both capillary adhesion and material softening contribute to overall gecko adhesion, but the relative contribution of each depends on the environmental context. Specifically, capillary adhesion dominates on hydrophilic substrates, and material softening dominates on hydrophobic substrates. At low temperature (12 °C), both capillary adhesion and material softening likely produce high adhesion across a range of relative humidity values. At high temperature (32 °C), material softening plays a dominant role in adhesive performance at an intermediate relative humidity (i.e., 70% RH).


Behaviour ◽  
2015 ◽  
Vol 152 (9) ◽  
pp. 1187-1207 ◽  
Author(s):  
A.S. Harrison ◽  
L.J. Revell ◽  
J.B. Losos

The habitat matrix model (HMM) explains convergence among arboreal animals as a result of the correlated evolution of morphology, locomotor mode, and habitat use. Although the HMM has generated important insights into the ecology of arboreal species, these tests have left a gap in the habitat-behavior-morphology story by focusing primarily on locomotor performance in lab and field experiments and thus failing to include data on locomotor behavior of undisturbed animals in the wild. We combined data on undisturbed locomotion, habitat use, and morphology for 31 species of arboreal lizard in the genusAnolisand used these data to test nine specific predictions arising from the HMM. We find strong support for nearly all aspects of this model. The addition of data on locomotion by undisturbed wild animals offers a more direct and compelling case for the HMM than most previous tests.


2020 ◽  
Vol 93 (5) ◽  
pp. 376-383 ◽  
Author(s):  
Raphaël Lagarde ◽  
Dominique Ponton ◽  
Guillaume Borie ◽  
Amber Hiebert ◽  
Christophe M. R. LeMoine

2018 ◽  
Vol 41 ◽  
Author(s):  
Peter DeScioli

AbstractThe target article by Boyer & Petersen (B&P) contributes a vital message: that people have folk economic theories that shape their thoughts and behavior in the marketplace. This message is all the more important because, in the history of economic thought, Homo economicus was increasingly stripped of mental capacities. Intuitive theories can help restore the mind of Homo economicus.


2019 ◽  
Vol 42 ◽  
Author(s):  
Jeffrey R. Alberts ◽  
Christopher Harshaw ◽  
Gregory E. Demas ◽  
Cara L. Wellman ◽  
Ardythe L. Morrow

Abstract We identify the significance and typical requirements of developmental analyses of the microbiome-gut-brain (MGB) in parents, offspring, and parent-offspring relations, which have particular importance for neurobehavioral outcomes in mammalian species, including humans. We call for a focus on behavioral measures of social-emotional function. Methodological approaches to interpreting relations between the microbiota and behavior are discussed.


Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.


Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


Sign in / Sign up

Export Citation Format

Share Document