Boron-doped diamond: Investigation of the stability of surface-doping versus bulk-doping using cyclic cluster model calculations

2008 ◽  
Vol 29 (13) ◽  
pp. 2295-2301 ◽  
Author(s):  
Florian Janetzko ◽  
Thomas Bredow ◽  
Gerald Geudtner ◽  
Andreas M. Köster
2019 ◽  
Vol 31 (4) ◽  
pp. 1105 ◽  
Author(s):  
Retno Wulandari ◽  
Tribidasari Anggraningrum Ivandini ◽  
. Irkham ◽  
Endang Saepudin ◽  
Yasuaki Einaga

2013 ◽  
Vol 62 (12) ◽  
pp. 2590-2594 ◽  
Author(s):  
D. A. Borisova ◽  
M. D. Vedenyapina ◽  
I. V. Krylova ◽  
A. K. Rakishev ◽  
D. Weichgrebe ◽  
...  

2011 ◽  
Vol 1318 ◽  
Author(s):  
Oleg Lysenko ◽  
Vladimir Grushko ◽  
Evgeni Mitskevich ◽  
Athanasios Mamalis

ABSTRACTThe results obtained by direct nano-patterning demonstrate the potential of the SPM-based techniques that include surface scratching to create 3D nanostructures. Such techniques became known as tribo-nanolithography and have prospects of being successfully implemented in the future nanofabrication industry. An important obstacle to this, however, is the effect of wear at the nanometer scale which is critical to the stability of tribo-nanolithoraphic processes. Such stability is achievable via in-depth theoretical and experimental studies of friction at the nanoscale along with the development of pioneering equipment. Our work presents the results of experimental fabrication of nanostructures formed by nanoscratching with the use of the multifunctional scanning tunneling microscopy previously developed by the authors. The authors attempted scratching the silicon surface by using a boron-doped diamond tip. This operation was undertaken in the same direction sequentially with the tip sliding a side of the groove by one of the tip’s facets and the consequent surface scanning. Although not being applicable to non-conductive surfaces, the proposed technique has significant advantages. One advantage is related to the high stiffness of the tunneling probe as compared to the stiffness of the AFM cantilever. High stiffness and perpendicularity of the tip to the surface during surface processing eliminates bending beam effects on the typical AFM and ensures machining effectiveness. Purposely synthesized boron-doped single-crystal diamonds were used as a tip material. The results of experimental fabrication of nanostructures formed by nanoscratching with the use of the multifunctional scanning probe are demonstrated and discussed.


2006 ◽  
Vol 956 ◽  
Author(s):  
Liang Guo ◽  
Guohua Chen

ABSTRACTBoron-doped diamond film coated titanium (Ti/BDD) becomes increasingly attractive because of the combined properties of these two unique materials. The challenge for the composite material is the stability especially when it is used as an electrode. In order to meet this challenge, two temperature (2-temp) staged hot filament chemical vapor deposition method was employed in this study. The accelerated working life time was significantly increased to 804 hours for the 2-temp electrode, compared with 244 hours for the diamond film electrode fabricated under one temperature (1-temp) stage method. With the characterization of micro-Raman, XRD, and cross-sectional SEM, a multilayer of Ti/TiC/(Diamond+Amorphous Carbon)/Diamond can be found in the 2-temp sample and the structure of Ti/TiC/Diamond in the 1-temp sample. There was less void space observed in the interlayer of 2-temp sample. The multi-layered compact structure plays an important role in improving the adhesion of diamond film to the titanium substrate which in turn increases the electrode working life time by over 3 times.


2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.


2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.


2020 ◽  
Vol 1135 ◽  
pp. 73-82 ◽  
Author(s):  
Zhen Yang ◽  
Mingji Li ◽  
Hongji Li ◽  
Huayi Li ◽  
Cuiping Li ◽  
...  

2013 ◽  
Vol 25 (7) ◽  
pp. 1734-1741 ◽  
Author(s):  
Ana Paula Pires Eisele ◽  
Débora Nóbile Clausen ◽  
César Ricardo Teixeira Tarley ◽  
Luiz Henrique Dall'Antonia ◽  
Elen Romão Sartori

2021 ◽  
Vol 118 (5) ◽  
pp. 052108
Author(s):  
D. Araujo ◽  
F. Lloret ◽  
G. Alba ◽  
M. P. Alegre ◽  
M. P. Villar

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