Charge-injection densities of iridium and iridium-ion-implanted Ti-6Al-4V with relevancy to neural stimulation

1991 ◽  
Vol 25 (8) ◽  
pp. 1039-1043 ◽  
Author(s):  
I-S. Lee ◽  
R. A. Buchanan ◽  
J. M. Williams
Keyword(s):  
Charge Injection ◽  
Neural Stimulation ◽  
Ion Implanted

scholarly journals Highly Stable PEDOT:PSS Coating on Gold Microelectrodes with Improved Charge Injection Capacity for Chronic Neural Stimulation

Proceedings ◽  
2017 ◽  
Vol 1 (4) ◽  
pp. 492 ◽  
Author(s):  
Anmona S. Pranti ◽  
Andreas Schander ◽  
André Bödecker ◽  
Walter Lang
Keyword(s):  
Charge Injection ◽  
Neural Stimulation

scholarly journals Zero mean waveforms for neural stimulation

2018 ◽  
Author(s):  
Ian Williams
Keyword(s):  
Charge Transfer ◽  
Power Consumption ◽  
Charge Injection ◽  
Neural Stimulation ◽  
Simple Method ◽  
Residual Voltage ◽  
Tissue Safety ◽  
Insight Into

Biphasic charge balanced waveforms do not minimise faradaic processes at the electrode-electrolyte boundary and do not leave electrodes neutral with respect to the tissue. Superior waveforms for electrode health (and consequently tissue safety) exist and may also offer better performance in terms of power consumption and stimulation effectiveness within charge injection limits. This paper aims to provide intuitive insight into the limitations of biphasic waveforms and presents a simple method for assessing how well other waveforms will perform, as well as methods for designing waveforms to theoretically give zero residual voltage and zero net faradaic charge transfer.

Potential-Biased, Asymmetric Waveforms for Charge-Injection With Activated Iridium Oxide (AIROF) Neural Stimulation Electrodes

2006 ◽  
Vol 53 (2) ◽  
pp. 327-332 ◽  
Author(s):  
S.F. Cogan ◽  
P.R. Troyk ◽  
J. Ehrlich ◽  
T.D. Plante ◽  
D.E. Detlefsen
Keyword(s):  
Charge Injection ◽  
Iridium Oxide ◽  
Neural Stimulation

scholarly journals Contribution of Oxygen Reduction to Charge Injection on Platinum and Sputtered Iridium Oxide Neural Stimulation Electrodes

2010 ◽  
Vol 57 (9) ◽  
pp. 2313-2321 ◽  
Author(s):  
Stuart F Cogan ◽  
Julia Ehrlich ◽  
Timothy D Plante ◽  
Marcus D Gingerich ◽  
Douglas B Shire
Keyword(s):  
Oxygen Reduction ◽  
Charge Injection ◽  
Iridium Oxide ◽  
Neural Stimulation

Evaluation of Charge Injection Properties of Thin Film Redox Materials for use as Neural Stimulation Electrodes

1987 ◽  
Vol 110 ◽  
Author(s):  
Ellen M. Kelliher ◽  
Timothy L. Rose
Keyword(s):  
Thin Film ◽  
Cyclic Voltammetry ◽  
Film Thickness ◽  
Charge Injection ◽  
Neural Stimulation ◽  
Constant Current ◽  
Dramatic Improvement ◽  
Polypyrrole Films ◽  
Rh Oxide ◽  
Conductive Polypyrrole

AbstractThe charge injection limits of a variety of thin film redox materials considered for use as neural stimulation electrodes were evaluated under standardized conditions. Materials tested included the oxides of Ni, Ir, Rh, Ru, and Mn as well as conductive polypyrrole films. Electrodes with geometric areas of, ∼10–4 cm2were tested in bicarbonate buffered saline of pH 7.3. An electrochemically “safe” potential window was determined for each material by cyclic voltammetry. Charge injection capabilities within that window are evaluated with constant current 0.2 msec pulses. Pulse modes include anodic first and cathodic first biphasic pulses and monophasic cathodal pulses applied to electrodes held at an anodic bias. Pulsing from the anodic bias increased the charge limits for all the materials, but the most dramatic improvement was for Rh oxide. The highest charge injection values were obtained with oxides of iridium and rhodium and were of comparable value for the anodic bias mode of pulsing. Where the effect of film thickness was examined, the charge injection limit leveled off at 2–4 mC/cm2geometric as the film thickness increased.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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