Solid-Phase Epitaxy of Thin Silicon Film on Si(111) Surface Studied by Scanning Tunneling Microscopy

1996 ◽  
Vol 36 (1) ◽  
pp. 45-53 ◽  
Author(s):  
Evgeny Ter-Ovanesyan ◽  
Yishay Manassen ◽  
Dov Shachal
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Solid Phase ◽  
Silicon Film ◽  
Scanning Tunneling ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Thin Silicon ◽  
Thin Silicon Film

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Evolution and Degeneration of Dimer-Adatom-Stacking-Fault Structure in Solid-Phase Epitaxy on Si(111) Surface Observed by Scanning Tunneling Microscopy

1998 ◽  
Vol 05 (01) ◽  
pp. 21-25
Author(s):  
Z. Zhang ◽  
M. A. Kulakov ◽  
B. Bullemer
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Solid Phase ◽  
Stacking Fault ◽  
Structure Evolution ◽  
Scanning Tunneling ◽  
Solid Phase Epitaxy ◽  
Dangling Bonds ◽  
Tunneling Microscopy ◽  
Fault Structure ◽  
Unit Cells

Large unit cells of dimer-adatom-stacking-fault structure and related 2 × 2 and c(4 × 2) reconstructions have been prepared by low-temperature solid-phase epitaxy and observed by scanning tunneling microscopy. The size-different unit cells of the DAS structure are considered to be a structure evolution in which more electron charge transfers in a larger unit cell from the adatom dangling bonds to the rest-atom dangling bonds. In some cases the DAS structure can degenerate into triangular 2 × 2 domains and bundlinke c(4 × 2) domains. The rest atoms are always fully filled by electrons due to the charge transfer. The adatom dangling bonds are partially filled in a c(4 × 2) symmetry and essentially empty in a 2 × 2 symmetry. As a result, the rest atoms in 2 × 2 domains can be imaged without the adatom protrusions while in the c(4 × 2) domains the protrusions of the adatoms and the rest atoms appear in zigzag chains, when the sample is negatively biased.

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