Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

2021 ◽  
Author(s):  
Tahsin Ahmed Mozaffor Onik ◽  
Huzein Fahmi Hawari ◽  
Mohd Faizul Mohd Sabri ◽  
Yew Hoong Wong
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Oxide Semiconductor Capacitor

DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100)

2005 ◽  
Vol 74 (1) ◽  
pp. 173-180 ◽  
Author(s):  
SANG-A LEE ◽  
SE-YOUNG JEONG ◽  
JAE-YEOL HWANG ◽  
JONG-PIL KIM ◽  
MYONG-GYU HA ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Characterization ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

2015 ◽  
Vol 106 (5) ◽  
pp. 051605 ◽  
Author(s):  
Shenghou Liu ◽  
Shu Yang ◽  
Zhikai Tang ◽  
Qimeng Jiang ◽  
Cheng Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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