High-frequency IIR switched capacitor filter using parallel cyclic-type circuit with low-power consumption

1993 ◽  
Vol 76 (7) ◽  
pp. 37-49
Author(s):  
Yoshinori Hirata ◽  
Nobuaki Takahashi ◽  
Kyoko Kato ◽  
Tsuyoshi Takebe
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Frequency ◽  
Low Power Consumption ◽  
Switched Capacitor ◽  
Cyclic Type

Low Voltage and High Oscillation Frequency Gated Ring Oscillator Using Bootstrap Technique

2013 ◽  
Vol 596 ◽  
pp. 195-198
Author(s):  
Nobukazu Takai ◽  
Ken Murakami ◽  
Haruo Kobayashi
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Frequency ◽  
Oscillation Frequency ◽  
Low Voltage ◽  
Ring Oscillator ◽  
Low Power Consumption ◽  
High Oscillation ◽  
High Oscillation Frequency ◽  
Boot Strap

In this paper, a high frequency ring oscillator with low power consumption is proposed.The proposed ring oscillator is based on GRO by applying boot strap technique. Simulation resultsindicate that the FoM(Power Consumption/Oscillation Frequency) of the proposed ring oscillator isless than that of the conventional ring oscillator.

SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

2001 ◽  
Vol 11 (04) ◽  
pp. 1159-1248 ◽  
Author(s):  
D. FLANDRE ◽  
J.-P. RASKIN ◽  
D. VANHOENACKER-JANVIER
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Low Power Consumption ◽  
New Model ◽  
Microwave Applications ◽  
High Degree

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

scholarly journals An efficient high speed, high frequency domino-logic based circuit

2018 ◽  
Vol 7 (2) ◽  
pp. 252
Author(s):  
Mahdi Zare ◽  
Hossein Manouchehrpour ◽  
Ahmad Esmaeilkhah
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Frequency ◽  
High Speed ◽  
Large Scale ◽  
Considerable Improvement ◽  
Low Power Consumption ◽  
Domino Logic ◽  
Large Scale Integration ◽  
Scale Integration

As the Very Large-Scale Integration (VLSI) techniques are mostly focused on high-speed and low power consumption circuits, various techniques and technologies were investigated to gain these two precious goals. Domino-logic is one of the circuits which is regarded to have high speed, high frequency and low power consumption. This work proposes a Domini logic circuit which has improved PDP compare to the previous one. The suggested circuit was simulated and the attained results show a considerable improvement in circuit’s speed in respect with its ancestor. The PDP of the circuit in 90 nm, biased at 1V, has been calculated as 53% approximately improvement. This improvement for PDP in 65 nm, 45 nm and 32 nm are 48%, 47% and 51% respectively.  

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