Photochemical vapor deposition of silicon nitride and fabrication of thin-film transistor

1990 ◽  
Vol 73 (8) ◽  
pp. 71-78
Author(s):  
Kazuhiko Suzuki ◽  
Koichi Kuroiwa ◽  
Koichi Kamisako ◽  
Yasuo Tarui
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Photochemical Vapor Deposition

Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication

2013 ◽  
Vol 284-287 ◽  
pp. 225-229 ◽  
Author(s):  
Chao Nan Chen ◽  
Jung Jie Huang ◽  
Gwo Mei Wu ◽  
How Wen Chien
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Nitride ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Chemical Vapor ◽  
Taper Angle ◽  
Shot Number

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

1996 ◽  
Vol 17 (6) ◽  
pp. 258-260 ◽  
Author(s):  
Kyung Ha Lee ◽  
Young Min Jhon ◽  
Hyuk Jin Cha ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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