Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor

2003 ◽  
Vol 9 (5) ◽  
pp. 235-238 ◽  
Author(s):  
H.C. Aspinall ◽  
J. Gaskell ◽  
P.A. Williams ◽  
A.C. Jones ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Praseodymium Oxide ◽  
Liquid Injection ◽  
Alkoxide Precursor

Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor.

ChemInform ◽  
2003 ◽  
Vol 34 (52) ◽  
Author(s):  
Helen C. Aspinall ◽  
Jeffrey Gaskell ◽  
Paul A. Williams ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxide Thin Films ◽  
Praseodymium Oxide ◽  
Liquid Injection ◽  
Alkoxide Precursor

Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lathanum Alkoxide Precursor

2004 ◽  
Vol 10 (1) ◽  
pp. 13-17 ◽  
Author(s):  
H.C. Aspinall ◽  
J. Gaskell ◽  
P.A. Williams ◽  
A.C. Jones ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Liquid Injection ◽  
Alkoxide Precursor

Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lanthanum Alkoxide Precursor.

ChemInform ◽  
2004 ◽  
Vol 35 (15) ◽  
Author(s):  
Helen C. Aspinall ◽  
Jeffrey Gaskell ◽  
Paul A. Williams ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Liquid Injection ◽  
Alkoxide Precursor

scholarly journals Fundamental Study on the SOx Gas Sensor Utilizing Beta-Alumina with Sputtered Praseodymium Oxide Thin Films.

1994 ◽  
Vol 110 (1) ◽  
pp. 37-42
Author(s):  
Shinya YAO ◽  
Kenji MIYAGAWA ◽  
Shigeru IIJIMA ◽  
Zensaku KOZUKA
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Oxide Thin Films ◽  
Praseodymium Oxide ◽  
Fundamental Study ◽  
Beta Alumina

Growth of Praseodymium Oxide and Praseodymium Silicate Thin Films by Liquid Injection MOCVD

2004 ◽  
Vol 10 (2) ◽  
pp. 83-89 ◽  
Author(s):  
H.C. Aspinall ◽  
J. Gaskell ◽  
P.A. Williams ◽  
A.C. Jones ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Praseodymium Oxide ◽  
Liquid Injection

Liquid Injection MOCVD of Rare-Earth Oxides Using New Alkoxide Precursors

2003 ◽  
Vol 784 ◽  
Author(s):  
Paul A. Williams ◽  
Anthony C. Jones ◽  
Helen C. Aspinall ◽  
Jeffrey M. Gaskell ◽  
Paul R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lanthanum Oxide ◽  
Molecular Aggregation ◽  
Praseodymium Oxide ◽  
H Nmr ◽  
Liquid Injection ◽  
Solution Studies ◽  
Alkoxide Precursors ◽  
Donor Species

ABSTRACTHigh purity lanthanum oxide and praseodymium oxide thin films (C< 1 at.-%) have been deposited by liquid injection MOCVD using the volatile alkoxide precursos [La(mmp)3] and [Pr(mmp)3] in toluene-solution (mmp = OCMe2CH2OMe). 1H NMR solution studies have shown that the addition of donor species, such as tetraglyme (CH3O(CH2CH2O)4CH3) or mmpH prevent molecular aggregation and help stabilise the precursors.

The Microstructure and Properties of Layered Oxide Thin Films Fabricated by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Tingkai Li ◽  
Yongfei Zhu ◽  
Seshu B. Desu ◽  
Masaya Nagata
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
Layered Oxide ◽  
Liquid Injection ◽  
Direct Liquid Injection ◽  
Single Crystal Sapphire ◽  
First Time ◽  
Mocvd Technique

ABSTRACTFor the first time, layered oxide thin films of SrBi2Ta2O9 (SBT) with very good ferroelectric properties have been prepared by direct-liquid-injection MOCVD technique. The SBT films were deposited onto both Pt/Ti/SiO2/Si wafers and single-crystal sapphire substrates to measure their phase formation, microstructure and ferroelectric properties. Crystalline SBT phase had been observed at temperatures as low as 500°C. With increasing deposition temperature above 500°C, the grain size of SBT thin films was increased from 0.01 μ m to 0.2 μm. The films were found to be dense and homogenous. Typically, SBT thin films of 200 nm thick with grain size about 0. 1μm have 2Pr around 10 μC/cm2 at 5V, Ec 55.7 kV/cm, and dielectric constant around 100. The leakage 9 2 currents were as low as 8 × 10−9 A/cm2 at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 × 1010 switching cycles. This development of MOCVD technique for good quality SBT films make their integration into high density nonvolatile memories relatively easy.

Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

2015 ◽  
Vol 589 ◽  
pp. 246-251 ◽  
Author(s):  
N. Zanfoni ◽  
L. Avril ◽  
L. Imhoff ◽  
B. Domenichini ◽  
S. Bourgeois
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Cerium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Liquid Injection ◽  
Direct Liquid Injection
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