The Microstructure and Properties of Layered Oxide Thin Films Fabricated by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Tingkai Li ◽  
Yongfei Zhu ◽  
Seshu B. Desu ◽  
Masaya Nagata
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
Layered Oxide ◽  
Liquid Injection ◽  
Direct Liquid Injection ◽  
Single Crystal Sapphire ◽  
First Time ◽  
Mocvd Technique

ABSTRACTFor the first time, layered oxide thin films of SrBi2Ta2O9 (SBT) with very good ferroelectric properties have been prepared by direct-liquid-injection MOCVD technique. The SBT films were deposited onto both Pt/Ti/SiO2/Si wafers and single-crystal sapphire substrates to measure their phase formation, microstructure and ferroelectric properties. Crystalline SBT phase had been observed at temperatures as low as 500°C. With increasing deposition temperature above 500°C, the grain size of SBT thin films was increased from 0.01 μ m to 0.2 μm. The films were found to be dense and homogenous. Typically, SBT thin films of 200 nm thick with grain size about 0. 1μm have 2Pr around 10 μC/cm2 at 5V, Ec 55.7 kV/cm, and dielectric constant around 100. The leakage 9 2 currents were as low as 8 × 10−9 A/cm2 at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 × 1010 switching cycles. This development of MOCVD technique for good quality SBT films make their integration into high density nonvolatile memories relatively easy.

Direct liquid injection chemical vapor deposition of platinum doped cerium oxide thin films

2015 ◽  
Vol 589 ◽  
pp. 246-251 ◽  
Author(s):  
N. Zanfoni ◽  
L. Avril ◽  
L. Imhoff ◽  
B. Domenichini ◽  
S. Bourgeois
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Cerium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films ◽  
Liquid Injection ◽  
Direct Liquid Injection

Atomic Layer Deposition (ALD) of Bismuth Titanium Oxide Thin Films Using Direct Liquid Injection (DLI) Method

2003 ◽  
Vol 59 (1) ◽  
pp. 1483-1489 ◽  
Author(s):  
Young Jin Cho ◽  
Yo-Sep Min ◽  
Jung-Hyun Lee ◽  
Bum-Seok Seo ◽  
June Key Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Direct Liquid Injection

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Growth of Lanthanum Oxide Thin Films by Liquid Injection MOCVD Using a Novel Lathanum Alkoxide Precursor

2004 ◽  
Vol 10 (1) ◽  
pp. 13-17 ◽  
Author(s):  
H.C. Aspinall ◽  
J. Gaskell ◽  
P.A. Williams ◽  
A.C. Jones ◽  
P.R. Chalker ◽  
...  
Keyword(s):  
Thin Films ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Liquid Injection ◽  
Alkoxide Precursor

Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

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