Low-Pressure Organometallic Chemical Vapor Deposition of Indium Nitride on Titanium Dioxide Nanoparticles

ChemPhysChem ◽  
2004 ◽  
Vol 5 (10) ◽  
pp. 1615-1618 ◽  
Author(s):  
Jeng-Han Wang ◽  
M. C. Lin
Keyword(s):  
Titanium Dioxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Titanium Dioxide Nanoparticles ◽  
Indium Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Organometallic Chemical Vapor Deposition

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Preparation of ZnO Films by Low-pressure Organometallic Chemical Vapor Deposition

1993 ◽  
Vol 22 (12) ◽  
pp. 2133-2136 ◽  
Author(s):  
Kenkichiro Kobayashi ◽  
Toshihiro Matsubara ◽  
Shigenori Matsushima ◽  
Gengi Okada
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Zno Films ◽  
Organometallic Chemical Vapor Deposition

Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN using Trimethylindium and Ammonia

2001 ◽  
Vol 693 ◽  
Author(s):  
Sonya D. McCall ◽  
Klaus J. Bachmann
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Three Dimensional Modeling ◽  
Elevated Pressures ◽  
Hard Shell ◽  
Organometallic Chemical Vapor Deposition

AbstractA physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of indium nitride (InN) from trimethylindium In(CH3)3 or TMI and ammonia (NH3) at elevated pressures has been developed and tested using the computational fluid dynamics code, CFD-ACE+. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.

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