ChemInform Abstract: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2Atomic Layers on Mica Substrate.

ChemInform ◽  
2016 ◽  
Vol 47 (38) ◽  
Author(s):  
Hua Xu ◽  
et al.
Keyword(s):  
Epitaxial Growth ◽  
Large Area ◽  
Mica Substrate

Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2Atomic Layers on Mica Substrate

2016 ◽  
Vol 28 (25) ◽  
pp. 5019-5024 ◽  
Author(s):  
Fangfang Cui ◽  
Cong Wang ◽  
Xiaobo Li ◽  
Gang Wang ◽  
Kaiqiang Liu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Large Area ◽  
Mica Substrate

Atomic Layers: Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate (Adv. Mater. 25/2016)

2016 ◽  
Vol 28 (25) ◽  
pp. 5018-5018 ◽  
Author(s):  
Fangfang Cui ◽  
Cong Wang ◽  
Xiaobo Li ◽  
Gang Wang ◽  
Kaiqiang Liu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Large Area ◽  
Mica Substrate

scholarly journals van der Waals epitaxy of large-area continuous ReS2 films on mica substrate

RSC Advances ◽  
2017 ◽  
Vol 7 (39) ◽  
pp. 24188-24194 ◽  
Author(s):  
Jing-Kai Qin ◽  
Wen-Zhu Shao ◽  
Yang Li ◽  
Cheng-Yan Xu ◽  
Dan-Dan Ren ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Van Der Waals ◽  
Large Area ◽  
Mica Substrate

Epitaxial growth of large area continuous ReS2 films on mica.

van der Waals Epitaxial Growth of Borophene on a Mica Substrate toward a High-Performance Photodetector

2021 ◽  
Author(s):  
Zenghui Wu ◽  
Guoan Tai ◽  
Runsheng Liu ◽  
Chuang Hou ◽  
Wei Shao ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Performance ◽  
Van Der Waals ◽  
Mica Substrate

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

2008 ◽  
Vol 600-603 ◽  
pp. 111-114 ◽  
Author(s):  
Masahiko Ito ◽  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Free Exciton ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Maximum Growth Rate ◽  
High Rate ◽  
Intrinsic Defect ◽  
Large Area

A vertical hot-wall type epi-reactor that makes it possible to simultaneously achieve both a high rate of epitaxial growth and large-area uniformity at the same time has been developed. A maximum growth rate of 250 µm/h is achieved at 1650 °C. Thickness uniformity of 1.1 % and doping uniformity of 6.7 % for a 65 mm radius area are achieved while maintaining a high growth rate of 79 µm/h. We also succeeded in growing a 280 µm-thick epilayer with excellent surface morphology and long carrier lifetime of ~1 µs on average. The LTPL spectrum shows free exciton peaks as dominant, and few impurity-related or intrinsic defect related peaks are observed. The DLTS measurement for an epilayer grown at 80 µm/h shows low trap concentrations of 1.2×1012 cm-3 for Z1/2 center and 6.3×1011 cm-3 for EH6/7 center, respectively.

The epitaxial growth of germanium and silicon on an Ag(111) film on a mica substrate

1982 ◽  
Vol 90 (1) ◽  
pp. 91-97
Author(s):  
M. Barkai ◽  
E. Grünbaum ◽  
Y. Lereah ◽  
G. Deutscher
Keyword(s):  
Epitaxial Growth ◽  
Mica Substrate

Epitaxial Growth of Cadmium Sulfide Films Evaporated Upon Mica

1967 ◽  
Vol 25 ◽  
pp. 346-347
Author(s):  
G. Shimaoka ◽  
A. S. Walch
Keyword(s):  
Cadmium Sulfide ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
The Other ◽  
Average Thickness ◽  
Direct Transmission ◽  
Mica Surface ◽  
Mica Substrate ◽  
Transmission Electron ◽  
Reflection Electron Diffraction

It has been reported that thin cadmium sulfide films evaporated onto a glass substrate show strong preferred orientation with the (0001) plane parallel to the substrate surface. Escoffery has reported highly oriented CdS crystals evaporated onto mica heated at 250°C. The purpose of the present experiment is to study the structure and orientation of thin CdS films evaporated onto a mica substrate as a function of the substrate temperature and to find the temperature of optimum epitaxial growth.Cadmium sulfide was evaporated onto a freshly cleaved mica surface heated at various temperatures between 25° and 500°C in a vacuum of ∼ 1 × 10−4 torr. Average thickness of the evaporated films was about 500Å. The evaporated specimens were divided into two parts. The first part was examined by reflection electron diffraction for several different azimuthal positions of the deposits on the mica surface. The other part was used for direct transmission electron microscopy.

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