ChemInform Abstract: LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing.

ChemInform ◽  
2010 ◽  
Vol 32 (30) ◽  
pp. no-no
Author(s):  
Dana Teasdale ◽  
Yoshihide Senzaki ◽  
Robert Herring ◽  
Gary Hoeye ◽  
Lawrence Page ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Kamath ◽  
B. Y. Kim ◽  
P. M. Blass ◽  
Y. M. Sun ◽  
J. M. White ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Oxidation Resistance ◽  
Photoelectron Spectroscopy ◽  
Thermal Processing ◽  
Oxidation Process ◽  
Rapid Thermal Processing ◽  
Tantalum Pentoxide ◽  
Process Window ◽  
X Ray ◽  
Passivation Layers

ABSTRACTThe oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

Advanced Dram Cell Dielectric Films using Rapid Thermal Processing

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Viju K. Mathews ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Structural Characteristics ◽  
Rapid Thermal Processing ◽  
Random Access ◽  
Dielectric Materials ◽  
Nonlinear Dependence ◽  
Dielectric Films ◽  
Storage Node ◽  
Carrier Tunneling

ABSTRACTThe reliable operation of a dynamic random access memory (DRAM) device requires a minimum level of charge to be stored in the capacitor. The nonlinear dependence between the scaling of the minimum charge and the cell area for higher DRAM densities is the driving force in the development of exotic capacitor structures and advanced cell dielectric materials. The conventional option of reducing the thickness of the silicon nitride dielectric films for high density DRAM applications will eventually be constrained by the increase in the leakage current due to direct carrier tunneling or by the decrease in the oxidation resistance of the films.In this paper we discuss the use of rapid thermal processing to modify the interface between the polysilicon storage node of the capacitor and the silicon nitride to improve the electrical and structural characteristics without any loss in capacitance. The influence of electrode roughness on the electrical behavior will also be discussed for the various dielectric stack combinations.

LPCVD of Silicon Nitride from Dichlorosilane and Ammonia by Single Wafer Rapid Thermal Processing

2001 ◽  
Vol 4 (5) ◽  
pp. F11 ◽  
Author(s):  
Dana Teasdale ◽  
Yoshihide Senzaki ◽  
Robert Herring ◽  
Gary Hoeye ◽  
Lawrence Page ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Rapid Thermal/Plasma Processing for In-Situ Dielectric Engineering (Invited)

1987 ◽  
Vol 92 ◽  
Author(s):  
Mehrdad M. Moslehi
Keyword(s):  
Silicon Nitride ◽  
Thermal Plasma ◽  
Thermal Processing ◽  
Microwave Plasma ◽  
Rapid Thermal Processing ◽  
Plasma Processing ◽  
Plasma Nitridation ◽  
Thermal Plasma Processing ◽  
Custom Made

ABSTRACTRapid thermal processing of silicon in oxygen and ammonia ambients is an attractive technique for the growth of thin dielectrics such as silicon nitride, silicon dioxide, nitrided oxides, oxidized nitrides, and application-specific (composition-tailored) insulators. Multicycle rapid thermal growth processes are suitable for dielectric engineering and in-situformation of thin layered insulators with a variety of controllable oxygen and nitrogen compositional depth profiles by appropriate design of the temperature and ambient gas cycles. The growth and electrical properties of various dielectrics rapidly grown by the state-of-the-art techniques and their corresponding device performance are examined. Rapid thermal processing and microwave plasma generation have been combined in a novel custom-made multipurpose reactor for rapid plasma-enhanced multiprocessing of Si, Ge, and GaAs. Thin germanium nitride dielectrics can be formed by rapid thermal or plasma nitridation for germanium CMOS applications. Combination of in-situ rapid plasma nitridation followed by silicon nitride deposition may prove to be effective for MIS structures and surface passivation on GaAs. These new applications of rapid thermal/plasma processing are additional steps towards realization of fully RTP-based Si VLSI fabrication processes and development of new devices and technologies on other semiconductor materials.

In-Situ Multiprocessing of Ultrathin Silicon Nitride Capacitors for Advanced Dram Cells

1994 ◽  
Vol 342 ◽  
Author(s):  
Randhir P.S. Thakur ◽  
Rick Hawthorne ◽  
Viju K. Mathews ◽  
Pierre C. Fazan ◽  
Chris J. Werkhoven ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Dielectric Film ◽  
Rapid Thermal Processing ◽  
Dielectric Films ◽  
Free Interface ◽  
Interface Control ◽  
Structural And Electrical Properties ◽  
Cluster Tool

ABSTRACTUltrathin silicon nitride capacitors were fabricated using in-situ multiprocessing technology. In this paper we present comparative studies of capacitor formation using standard furnace processing, rapid thermal processing (RTP), and cluster tool processing of ONO dielectric films. We show that, due to better interface control using cluster tool processing, higher capacitance can be obtained for a fixed leakage level for the same thickness of dielectric film when compared to furnace and rapid thermal processing. We discuss the structural and electrical properties of these films and show that, due to an oxide-free interface, the improved film quality results in lower leakage current density and higher reliability.

Thin Nitride Films: Pushing the Limits Using Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
S. J. DeBoer ◽  
R. P. S. Thakur
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Thermal Processing ◽  
Dielectric Material ◽  
Rapid Thermal Processing ◽  
Semiconductor Processing ◽  
Nucleation Behavior ◽  
Silicon Nitride Films ◽  
Current Reduction ◽  
Almost All

AbstractSilicon nitride, a celebrated dielectric material in semiconductor processing, is used extensively in almost all of today's key technologies (DRAM, microprocessor, SRAM, Flash memories, etc.). The physical and electrical properties of this material are well understood, and integration of silicon nitride in a given process is simple. As a result of these benefits, alternate dielectric material technologies have found limited acceptance. As feature sizes shrink, the formation of reliable thin nitride films is critical and the performance of these nitride films is very dependent on the technology used for their preparation. In this paper, we show that an incremental and overall improvement in the physical and electrical properties of nitride films can be attained by using rapid thermal processing technology.We present the nucleation behavior of the <100 Å nitride films on polysilicon surfaces. We investigate the integrity of these films as a function of predeposition environment and discuss the oxidation and punch-through resistance of cluster tool-deposited films. The results of our studies of the conduction mechanism in thin silicon nitride films and scaling limits for these films are shown. We also discuss the structural and electrical changes these films undergo during the subsequent reoxidation process performed for leakage current reduction.

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