ChemInform Abstract: Metal-ptn Enhanced Schottky Barriers on (100) InP Formed by an Open Tube Diffusion Technique in conjunction with rapid thermal annealing.

1986 ◽  
Vol 17 (42) ◽  
Author(s):  
G. J. GUALTIERI ◽  
G. P. SCHWARTZ ◽  
G. J. ZYDZIK ◽  
L. G. VAN UITERT
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Barriers ◽  
Open Tube ◽  
Diffusion Technique

Si impurity‐induced layer disordering of AlxGa1−x‐GaAs quantum‐well heterostructures by As‐free open‐tube rapid thermal annealing

1990 ◽  
Vol 68 (12) ◽  
pp. 6199-6206 ◽  
Author(s):  
J. S. Major ◽  
F. A. Kish ◽  
T. A. Richard ◽  
A. R. Sugg ◽  
J. E. Baker ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Open Tube

Metal‐p+‐n Enhanced Schottky Barriers on (100) InP Formed by an Open Tube Diffusion Technique

1986 ◽  
Vol 133 (7) ◽  
pp. 1425-1429 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
G. J. Zydzik ◽  
L. G. Van Uitert
Keyword(s):  
Schottky Barriers ◽  
Open Tube ◽  
Diffusion Technique

Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing

1990 ◽  
Vol 57 (27) ◽  
pp. 2904-2906 ◽  
Author(s):  
T. A. Richard ◽  
J. S. Major ◽  
F. A. Kish ◽  
N. Holonyak ◽  
S. C. Smith ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Quantum Well Lasers ◽  
Open Tube ◽  
Buried Heterostructure ◽  
Low Threshold

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
Sign in / Sign up

Export Citation Format

Share Document