Metal‐p+‐n Enhanced Schottky Barriers on (100) InP Formed by an Open Tube Diffusion Technique

1986 ◽  
Vol 133 (7) ◽  
pp. 1425-1429 ◽  
Author(s):  
G. J. Gualtieri ◽  
G. P. Schwartz ◽  
G. J. Zydzik ◽  
L. G. Van Uitert
1987 ◽  
Vol 134 (10) ◽  
pp. 2631-2634 ◽  
Author(s):  
A. N. M. Masum Choudhury ◽  
M. Oren ◽  
M. A. Rothman ◽  
S. K. Shastry

1987 ◽  
Vol 50 (4) ◽  
pp. 209-211 ◽  
Author(s):  
Sorab K. Ghandhi ◽  
Krishna K. Parat

1990 ◽  
Vol 26 (5) ◽  
pp. 837-842 ◽  
Author(s):  
K. Isshiki ◽  
T. Kamizato ◽  
A. Takami ◽  
A. Shima ◽  
S. Karakida ◽  
...  

1986 ◽  
Vol 22 (4) ◽  
pp. 221
Author(s):  
M. Oren ◽  
F.C. Prince

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

Author(s):  
Pravin Patil ◽  
Anil Sharma ◽  
Subhash Dadarwal ◽  
Vijay Sharma

The objective of present investigation was to enhance brain penetration of Lamivudine, one of the most widely used drugs for the treatment of AIDS. This was achieved through incorporating the drug into solid lipid nanoparticles (SLN) prepared by using emulsion solvent diffusion technique. The formulations were characterized for surface morphology, size and size distribution, percent drug entrapment and drug release. The optimum rotation speed, resulting into better drug entrapment and percent yield, was in the range of 1000-1250 r/min. In vitro cumulative % drug release from optimized SLN formulation was found 40-50 % in PBS (pH-7.4) and SGF (pH-1.2) respectively for 10 h. After 24 h more than 65 % of the drug was released from all formulations in both mediums meeting the requirement for drug delivery for prolong period of time.


Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.


1988 ◽  
Author(s):  
Mark VAN Schilfgaarde
Keyword(s):  

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