ChemInform Abstract: CHARACTERIZATION OF LOW OXIDATION STATES OF TUNGSTEN AND TUNGSTEN ELECTRODES IN ALUMINUM CHLORIDE-SODIUM CHLORIDE MELTS BY X-RAY PHOTOELECTRON SPECTROSCOPY

1985 ◽  
Vol 16 (38) ◽  
Author(s):  
A. G. CAVINATO ◽  
G. MAMANTOV ◽  
X. B. III COX
Keyword(s):  
Sodium Chloride ◽  
Aluminum Chloride ◽  
Photoelectron Spectroscopy ◽  
Oxidation States ◽  
X Ray ◽  
Abstract Characterization ◽  
Chloride Melts ◽  
Tungsten Electrodes ◽  
And Tungsten

Characterization of europium implanted LiNbO3

1993 ◽  
Vol 8 (10) ◽  
pp. 2679-2685 ◽  
Author(s):  
P. Moretti ◽  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thévenard ◽  
...  
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
Oxidation States ◽  
Xps Spectra ◽  
X Ray ◽  
Partial Recrystallization ◽  
Lower Charge

LiNbO3 single crystals were implanted at room temperature with Eu+ ions at 70 keV with fluence ranging from 0.5 to 5 × 1016 ions · cm−2. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in Eu2+ and Eu3+ states, and the Nb5+ ions are driven to lower charge states.

Characterization of thin Chemical/Native Oxides on Si (100) by Auger and Angle-Resolved XPS

1993 ◽  
Vol 318 ◽  
Author(s):  
Eddie D. Pylant ◽  
Carolyn F. Hoener ◽  
Mark F. Arendt ◽  
Bob Witowski
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Depth Distribution ◽  
Oxidation States ◽  
State Distribution ◽  
X Ray ◽  
Depth Profiles ◽  
Native Oxides ◽  
Target Factor Analysis

ABSTRACTChemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.

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