ChemInform Abstract: ELECTRICAL PROPERTIES OF THE SEMICONDUCTOR MATERIALS MOLYBDENUM AND TUNGSTEN TRIOXIDES

1983 ◽  
Vol 14 (42) ◽  
Author(s):  
A. A. HANNA ◽  
M. A. KHILLA
2007 ◽  
Vol 124-126 ◽  
pp. 343-346 ◽  
Author(s):  
Yong Hee Han ◽  
Seung Hoon Lee ◽  
Kun Tae Kim ◽  
In Hoon Choi ◽  
Sung Moon

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.


1943 ◽  
Vol 65 (4) ◽  
pp. 600-602 ◽  
Author(s):  
Harry Seltz ◽  
F. J. Dunkerley ◽  
B. J. DeWitt

2014 ◽  
Vol 644-650 ◽  
pp. 3552-3555
Author(s):  
Jian Zhen Huo

Resistivity is an important parameter to determine the electrical properties of semiconductor materials, which can be obtained from four-probe measurement to get the doping concentration and other important information. This paper gives an introduction of an intelligent DC four-probe meter based on Micro-Controller Unit (MCU), including the principle, the overall framework and the function of each module. The design of hardware and software of the system are described. This instrument has the advantages of miniature size, modular structure, strong anti-interference ability and low power consumption.


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