ChemInform Abstract: ELECTRICAL PROPERTIES OF SEMICONDUCTOR MATERIALS. CHROMIUM TRIOXIDE

1982 ◽  
Vol 13 (16) ◽  
Author(s):  
M. A. KHILLA ◽  
A. A. HANNA
Keyword(s):  
Electrical Properties ◽  
Chromium Trioxide ◽  
Semiconductor Materials

Intelligent Four-Probe Resistivity Meter Based on MCU

2014 ◽  
Vol 644-650 ◽  
pp. 3552-3555
Author(s):  
Jian Zhen Huo
Keyword(s):  
Electrical Properties ◽  
Power Consumption ◽  
Low Power ◽  
Doping Concentration ◽  
Probe Measurement ◽  
Modular Structure ◽  
Semiconductor Materials ◽  
Low Power Consumption ◽  
Resistivity Meter ◽  
Micro Controller Unit

Resistivity is an important parameter to determine the electrical properties of semiconductor materials, which can be obtained from four-probe measurement to get the doping concentration and other important information. This paper gives an introduction of an intelligent DC four-probe meter based on Micro-Controller Unit (MCU), including the principle, the overall framework and the function of each module. The design of hardware and software of the system are described. This instrument has the advantages of miniature size, modular structure, strong anti-interference ability and low power consumption.

Electron Microprobe Characterization of the Stoichiometry and Homogeneity of Mixed-Crystal Semiconductor Materials

1970 ◽  
Vol 24 (6) ◽  
pp. 580-582 ◽  
Author(s):  
James P. Smith ◽  
Herbert Kraus
Keyword(s):  
Electrical Properties ◽  
Electron Microprobe ◽  
Mixed Crystal ◽  
General Scheme ◽  
Semiconductor Materials ◽  
Standard Samples ◽  
X Ray ◽  
Crystallographic Orientations

A general scheme is described which simplifies the characterization of mixed-crystal semiconductor materials. The scheme is illustrated through the analysis of (Hg1− xCd x)Te samples. Electron microprobe analyses are made at several random points on the material. A plot of the cadmium Lα x-ray intensity vs the mercury α x-ray intensity is compared to a stoichiometry line. The scatter of points is a measure of the homogeneity of the material while the correlation of the points with the stoichiometry line indicates the presence of off-stoichiometry material. The stoichiometry line can be theoretically determined or can be obtained using well characterized standard samples. The scheme can best be used on systems which have large composition variations and therefore supplements electrical and x-ray crystallographic methods which are sensitive to minor variations in electrical properties or crystallographic orientations.

scholarly journals Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 832
Author(s):  
Hocheon Yoo ◽  
Keun Heo ◽  
Md. Hasan Raza Ansari ◽  
Seongjae Cho
Keyword(s):  
Electrical Properties ◽  
Transition Metal Dichalcogenides ◽  
Visible Region ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

scholarly journals Effect of structural heterogeneity on conductivity semiconductor materials

2011 ◽  
Vol 16 (4) ◽  
pp. 11-14
Author(s):  
V.A. Bahov ◽  
E.A. Nazderkin ◽  
A.S. Mazinov ◽  
L.D. Pisarenko
Keyword(s):  
Electrical Properties ◽  
Structure Determination ◽  
Structural Heterogeneity ◽  
Semiconductor Materials ◽  
Amorphous Films ◽  
Hydrogenated Silicon ◽  
Structured Materials ◽  
Aperiodic Structure ◽  
Temperature Dependences

Complexity in understanding of the processes spotting the electrical properties of structured materials is considered from the side of the quantum representation of aperiodic structure. Determination of each of the view disordered aperiodic matrixes by means of statistical and energy parameters have allowed to describe the temperature dependences of the electroconductivity of the hydrogenated silicon amorphous films

Thermal and electrical properties of semiconductor materials processed by HPT

2019 ◽  
Vol 2019.10 (0) ◽  
pp. 21pm1PN303
Author(s):  
Kensuke Matsuda ◽  
Mizuki Kashifuji ◽  
SHENHONG Ju ◽  
SIVASANKARAN Harish ◽  
Yoshifumi Ikoma ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Semiconductor Materials ◽  
Thermal And Electrical Properties
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