Interface and electrical properties of plasma deposited tungsten and tungsten nitride Schottky contacts to GaAs

1994 ◽  
Vol 76 (1) ◽  
pp. 542-545 ◽  
Author(s):  
Yong Tae Kim ◽  
Chang Woo Lee
Keyword(s):  
Electrical Properties ◽  
Schottky Contacts ◽  
Tungsten Nitride ◽  
And Tungsten

Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4193-4196 ◽  
Author(s):  
Cheng-Shih Lee ◽  
Edward-Yi Chang ◽  
Li Chang ◽  
Chao-Yi Fang ◽  
Yao-Lin Huang ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Tungsten Nitride ◽  
And Tungsten

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

2011 ◽  
Vol 20 (6) ◽  
pp. 067303 ◽  
Author(s):  
Fang Liu ◽  
Zhi-Xin Qin ◽  
Fu-Jun Xu ◽  
Sheng Zhao ◽  
Xiang-Ning Kang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Tungsten Nitride ◽  
Thermal Stability Of ◽  
And Tungsten

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Tribological properties and oxidation resistance of tungsten and tungsten nitride films at temperatures up to 500 °C

2019 ◽  
Vol 132 ◽  
pp. 211-220 ◽  
Author(s):  
D. Javdošňák ◽  
J. Musil ◽  
Z. Soukup ◽  
S. Haviar ◽  
R. Čerstvý ◽  
...  
Keyword(s):  
Oxidation Resistance ◽  
Tribological Properties ◽  
Tungsten Nitride ◽  
And Tungsten

Properties of Electrical Conductivity of Amorphous Tungsten-Doped Vanadium Oxide for Uncooled Microbolometers

2007 ◽  
Vol 124-126 ◽  
pp. 343-346 ◽  
Author(s):  
Yong Hee Han ◽  
Seung Hoon Lee ◽  
Kun Tae Kim ◽  
In Hoon Choi ◽  
Sung Moon
Keyword(s):  
Electrical Conductivity ◽  
Electronic Structure ◽  
Electrical Properties ◽  
Vanadium Oxide ◽  
Tungsten Oxide ◽  
Uncooled Microbolometer ◽  
Thermometric Material ◽  
Very High ◽  
And Tungsten

In recent years, we have reported uncooled microbolometer with amorphous vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this changes of electronic structure attribute to electrical properties such as high TCR values of vanadium-tungsten oxide.

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