ChemInform Abstract: PHOTOELECTROCHEMICAL PROPERTIES OF SINGLE-CRYSTAL STRONTIUM TITANATE(IV) DOPED IN THE SURFACE REGION

1982 ◽  
Vol 13 (25) ◽  
Author(s):  
I. WATANABE ◽  
Y. MATSUMOTO ◽  
E. SATO
Keyword(s):  
Single Crystal ◽  
Strontium Titanate ◽  
Surface Region ◽  
Photoelectrochemical Properties

scholarly journals Interactions of Ruddlesden-Popper Phases and Migration-Induced Field-Stabilized Polar Phase in Strontium Titanate

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 693
Author(s):  
Christian Ludt ◽  
Elena Ovchinnikova ◽  
Anton Kulikov ◽  
Dmitri Novikov ◽  
Sibylle Gemming ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Density Functional ◽  
Surface Region ◽  
Point Of View ◽  
Polar Phase ◽  
Near Surface ◽  
Atomic Displacements ◽  
Induced Field ◽  
And Migration ◽  
Novel Concept

This work focuses on the validation of a possible connection of the known Ruddlesden-Popper (RP) phases and the novel concept of the migration-induced field-stabilized polar (MFP) phase. To study this subject, model structures of RP phases in bulk strontium titanate are analyzed by means of density functional theory (DFT). The obtained geometries are compared to experimental MFP data. Good agreement can be found concerning atomic displacements in the pm range and lattice strain inferred by the RP phases. Looking at the energy point of view, the defect structures are on the convex hull of the Gibb’s free energy. Although the dynamics to form the discussed defect models are not addressed in detail, the interplay and stability of the described defect model will add to the possible structure scenarios within the near-surface region of strontium titanate. As a result, it can be suggested that RP phases generally favor the MFP formation.

Electric and Photoelectrochemical Properties of CuGaSe2 Single Crystal

2020 ◽  
Vol MA2020-02 (27) ◽  
pp. 1907-1907
Author(s):  
Shigeru Ikeda ◽  
Wakaba Fujita ◽  
Yoshitaro Nose ◽  
Ryoji Katsube ◽  
Kenji Yoshino ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectrochemical Properties

scholarly journals Electrodynamic properties of single-crystal and thin-film strontium titanate

2000 ◽  
Vol 28 (1-4) ◽  
pp. 193-200
Author(s):  
A. T. Findikoglu ◽  
Q. X. Jia ◽  
D. W. Reagor ◽  
C. Kwon ◽  
K. O. Rasmussen
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Strontium Titanate

3C-SiC Buffer Layers Converted from Si at a Low Temperature

1999 ◽  
Vol 572 ◽  
Author(s):  
H. M. Liaw ◽  
S. Q. Hong ◽  
P. Fejes ◽  
D. Werho ◽  
H. Tompkins ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Single Crystal ◽  
Misfit Dislocation ◽  
Surface Region ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Lattice Strains ◽  
High Resolution Tem ◽  
Sic Films

ABSTRACTWe have obtained single-crystal 3C-SiC films via conversion of the surface region of Si (111) and (100) wafers at 970 °C by reaction with C2H4 in an MBE reactor. The major defects in the films were clusters, voids, and misfit dislocations. Investigation by high resolution TEM images showed low lattice strains in the epitaxial layer due to the formation of 1 misfit dislocation for every 4 to 5 regular SiC planes that are bonded to Si at the interface. The clusters and voids often occurred in pairs. A model for forming the void-cluster pairs is suggested.

Electromechanical Behavior of Single-Crystal Strontium Titanate

1967 ◽  
Vol 155 (3) ◽  
pp. 1019-1028 ◽  
Author(s):  
G. Rupprecht ◽  
W. H. Winter
Keyword(s):  
Single Crystal ◽  
Strontium Titanate ◽  
Electromechanical Behavior
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