Redistribution of excess space charge in structures based on single-crystal strontium titanate

1997 ◽  
Vol 39 (2) ◽  
pp. 305-307 ◽  
Author(s):  
A. I. Dedyk ◽  
L. T. Ter-Martirosyan
Keyword(s):  
Single Crystal ◽  
Space Charge ◽  
Strontium Titanate

scholarly journals Electrodynamic properties of single-crystal and thin-film strontium titanate

2000 ◽  
Vol 28 (1-4) ◽  
pp. 193-200
Author(s):  
A. T. Findikoglu ◽  
Q. X. Jia ◽  
D. W. Reagor ◽  
C. Kwon ◽  
K. O. Rasmussen
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Strontium Titanate

Pt–Cu2O–Cu single-carrier space-charge-limited diodes

1977 ◽  
Vol 55 (7-8) ◽  
pp. 735-741 ◽  
Author(s):  
F. L. Weichman ◽  
K. T. Chee
Keyword(s):  
Single Crystal ◽  
Space Charge ◽  
Applied Voltage ◽  
Conduction Mechanism ◽  
Localized States ◽  
Current Response ◽  
Valence Band Edge ◽  
Single Carrier ◽  
Carrier Space ◽  
Space Charge Limited

This paper reports on the experimental results on the characteristics of the single-crystal Cu2O diodes, annealed at a pressure of 10−6 Torr at a temperature of 800 °C. In contrast to our previous report on oxidized samples which showed the characteristics of double injection diodes, these diodes exhibit the characteristics of single-carrier space-charge-limited (SCL) conduction. The conduction mechanism was confirmed by measurements on the I–V characteristics at various temperatures, the thickness vs. current relation at a given voltage, the effect of photomemory on the I–V characteristics, and the transient current response to applied voltage steps. The results also indicate that there are continuous levels of localized states in these samples in the range 0.06 eV to 0.47 eV above the valence band edge.

scholarly journals Oxygen diffusion in single crystal barium titanate

2015 ◽  
Vol 17 (19) ◽  
pp. 12587-12597 ◽  
Author(s):  
Markus Kessel ◽  
Roger A. De Souza ◽  
Manfred Martin
Keyword(s):  
Barium Titanate ◽  
Single Crystal ◽  
Space Charge ◽  
Oxygen Isotope ◽  
Oxygen Diffusion ◽  
Oxygen Vacancies ◽  
Space Charge Layer ◽  
Charge Layer ◽  
Migration Enthalpy

Oxygen isotope experiments reveal a surface space-charge layer and a migration enthalpy of oxygen vacancies of 0.7 eV.

Electromechanical Behavior of Single-Crystal Strontium Titanate

1967 ◽  
Vol 155 (3) ◽  
pp. 1019-1028 ◽  
Author(s):  
G. Rupprecht ◽  
W. H. Winter
Keyword(s):  
Single Crystal ◽  
Strontium Titanate ◽  
Electromechanical Behavior

Observation of Charge Separation and Space-Charge Region in Single-Crystal P3HT/C60 Heterojunction Nanowires

2016 ◽  
Vol 128 (35) ◽  
pp. 10429-10433
Author(s):  
Kyung Sun Park ◽  
Ki Seok Lee ◽  
Jangmi Baek ◽  
Lynn Lee ◽  
Byung Hee Son ◽  
...  
Keyword(s):  
Single Crystal ◽  
Space Charge ◽  
Space Charge Region ◽  
Charge Separation

scholarly journals Electronically reconfigurable complex oxide heterostructure freestanding membranes

2021 ◽  
Vol 7 (33) ◽  
pp. eabh1284
Author(s):  
Kitae Eom ◽  
Muqing Yu ◽  
Jinsol Seo ◽  
Dengyu Yang ◽  
Hyungwoo Lee ◽  
...  
Keyword(s):  
Single Crystal ◽  
Strontium Titanate ◽  
Complex Oxide ◽  
Nanoelectronic Devices ◽  
Lanthanum Aluminate ◽  
Atomic Force ◽  
Metal To Insulator Transition ◽  
Millikelvin Temperatures ◽  
Silicon Based ◽  
Oxide Heterostructure

In recent years, lanthanum aluminate/strontium titanate (LAO/STO) heterointerfaces have been used to create a growing family of nanoelectronic devices based on nanoscale control of LAO/STO metal-to-insulator transition. The properties of these devices are wide-ranging, but they are restricted by nature of the underlying thick STO substrate. Here, single-crystal freestanding membranes based on LAO/STO heterostructures were fabricated, which can be directly integrated with other materials via van der Waals stacking. The key properties of LAO/STO are preserved when LAO/STO membranes are formed. Conductive atomic force microscope lithography is shown to successfully create reversible patterns of nanoscale conducting regions, which survive to millikelvin temperatures. The ability to form reconfigurable conducting nanostructures on LAO/STO membranes opens opportunities to integrate a variety of nanoelectronics with silicon-based architectures and flexible, magnetic, or superconducting materials.

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