Phosphorus-containing polyhedral oligomeric silsesquioxane/polyimides hybrid materials with low dielectric constant and low coefficients of thermal expansion

2015 ◽  
Vol 132 (39) ◽  
pp. n/a-n/a ◽  
Author(s):  
Xuesong Li ◽  
Jinmeng Hao ◽  
Qiyang Jiang ◽  
Jianxin Mu ◽  
Zhenhua Jiang
Keyword(s):  
Dielectric Constant ◽  
Thermal Expansion ◽  
Hybrid Materials ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Phosphorus Containing ◽  
Oligomeric Silsesquioxane

Toughening of cyanate resin with low dielectric constant by glycidyl polyhedral oligomeric silsesquioxane

2016 ◽  
Vol 29 (4) ◽  
pp. 458-466 ◽  
Author(s):  
Jian Jiao ◽  
Li-zhen Zhao ◽  
Yu Xia ◽  
Lei Wang
Keyword(s):  
Dielectric Constant ◽  
High Performance ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Low Dielectric Constant ◽  
Curing Agent ◽  
Melt Blending ◽  
Elongation At Break ◽  
Low Dielectric ◽  
Oligomeric Silsesquioxane ◽  
Scanning Electron

In this article, a high-performance hybrid material was prepared by melt blending from glycidyl polyhedral oligomeric silsesquioxane (G-POSS) and bisphenol-A cyanate ester (CE), using triethylamine as the curing agent. The structure of the hybrid was characterized by Fourier transform infrared spectroscopy and scanning electron microscopy (SEM), and the transparency properties, mechanical properties, dielectric properties, thermal performance, and wet fastness were studied. The results showed that G-POSS was uniformly distributed in the CE matrix and could obviously accelerate the curing reaction of the resin. Large amounts of corrugated and scaled structures were observed on the fractures of G-POSS/CE by the SEM photos. When the G-POSS content increased to 7 phr, the tensile strength (75.45 MPa), elongation at break (3.19%), and impact strength (23.76 kJ m−2) reached maximum values, representing increases of 21.75%, 27.6%, and 157.98% relative to that of pure CE, respectively, which indicated that the addition of G-POSS can significantly improve the toughness of G-POSS/CE composites. When the G-POSS content increased to 4 phr, the dielectric constant decreased from 3.27 to the minimum value of 3.05. The heat resistance and wet fastness of G-POSS/CE hybrid materials decreased with increasing G-POSS content.

scholarly journals Functional Polyimide/Polyhedral Oligomeric Silsesquioxane Nanocomposites

Polymers ◽  
2018 ◽  
Vol 11 (1) ◽  
pp. 26 ◽  
Author(s):  
Mohamed Mohamed ◽  
Shiao Kuo
Keyword(s):  
Mechanical Characteristics ◽  
Chemical Resistance ◽  
Polyhedral Oligomeric Silsesquioxane ◽  
Surface Hydrophobicity ◽  
Low Dielectric Constant ◽  
Hybrid Nanocomposite ◽  
Low Dielectric ◽  
Redox Stability ◽  
Oligomeric Silsesquioxane ◽  
Physical Blending

The preparation of hybrid nanocomposite materials derived from polyhedral oligomeric silsesquioxane (POSS) nanoparticles and polyimide (PI) has recently attracted much attention from both academia and industry, because such materials can display low water absorption, high thermal stability, good mechanical characteristics, low dielectric constant, flame retardance, chemical resistance, thermo-redox stability, surface hydrophobicity, and excellent electrical properties. Herein, we discussed the various methods that have been used to insert POSS nanoparticles into PI matrices, through covalent chemical bonding and physical blending, as well as the influence of the POSS units on the physical properties of the PIs.

Properties and Microstructure of Mullite-Glass Ceramics for Multilayer Ceramic Substrates

1992 ◽  
Vol 264 ◽  
Author(s):  
N. Ushifusa ◽  
K. Sakamoto ◽  
S. Ogihara ◽  
T. Fujita
Keyword(s):  
Dielectric Constant ◽  
Thermal Expansion ◽  
Cooling Rate ◽  
Thermal Expansion Coefficient ◽  
Glass Phase ◽  
Sintering Temperature ◽  
Glass Ceramics ◽  
Low Dielectric Constant ◽  
Cooling Process ◽  
Low Dielectric

AbstractMullite (3Al2O3·2SiO2) has a low thermal expansion coefficient and a low dielectric constant making it a favorable material for substrate applications. Sintering of pure mullite ceramics is difficult, however, even above 1700°C. Thus, mullite-glass ceramics containing glass additives (Al2O3-MgO-SiO2 glass) which could be sintered at about 1600°;C were fabricated and their properties were investigated. The ternary system diagram of Al2O3-MgO-SiO2 shows that high SiO2 content glass depos its cristobalite at 200 to 270°C, which causes a substantial volume change, resulting in ceramic substrate cracking. Therefore it is particularly important to prevent crystallization of cristobalite from the glass phase in mullite-glass ceramics. The glass phase softens or partially fuses above 1600°C, and cristobalite formation in the glass phase occurs in the cooling process during firing. In order to obtain good substrates of mullite-glass ceramics, a higher temperature for sintering and faster cooling rate after firing are preferable. Analytical results by X-ray, SEM and EPMA show that mullite dissolves in the glass phase at a higher sintering temperature and more mullite crystallizes in the cooling process with a lower rate. The content of Al2O3 in the glass phase, therefore, increases with the increased sintering temperature and cooling rate, which may restrain crystallization of cristobalite. By adjusting of the composition of mullite and glass phase, mullite-glass ceramics with low dielectric constant (5.9), thermal expansion coefficient (3.5×10−6/°C) close to that of silicon chips, and high bending strength (210MPa) have been developed. These substrates made of mullite-glass ceramics are suitable for mounting silicon devices of computer processors.

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