Li/Garnet Interface Stabilization by Thermal‐Decomposition Vapor Deposition of an Amorphous Carbon Layer

2020 ◽  
Vol 59 (13) ◽  
pp. 5346-5349 ◽  
Author(s):  
Wuliang Feng ◽  
Xiaoli Dong ◽  
Xiang Zhang ◽  
Zhengzhe Lai ◽  
Panlong Li ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Carbon Layer ◽  
Amorphous Carbon Layer

Li/Garnet Interface Stabilization by Thermal‐Decomposition Vapor Deposition of an Amorphous Carbon Layer

2020 ◽  
Vol 132 (13) ◽  
pp. 5384-5387
Author(s):  
Wuliang Feng ◽  
Xiaoli Dong ◽  
Xiang Zhang ◽  
Zhengzhe Lai ◽  
Panlong Li ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Carbon Layer ◽  
Amorphous Carbon Layer

Amorphous carbon layer contributing Li storage capacity to Nb2O5@C nanosheets

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36104-36107 ◽  
Author(s):  
Lei Wang ◽  
Boyang Ruan ◽  
Jiantie Xu ◽  
Hua Kun Liu ◽  
Jianmin Ma
Keyword(s):  
Amorphous Carbon ◽  
Storage Capacity ◽  
High Capacity ◽  
Carbon Layer ◽  
Large Capacity ◽  
Li Storage ◽  
Amorphous Carbon Layer

The high-capacity of Nb2O5 nanosheets has been successfully realized through introducing amorphous carbon layers, which have been demonstrated to have a large capacity owing to the existence of defects on amorphous carbon layers.

Diamond-like amorphous carbon layer film by an inductively coupled plasma system for next generation etching hard mask

2018 ◽  
Vol 663 ◽  
pp. 21-24 ◽  
Author(s):  
Se Jun Park ◽  
Dohyung Kim ◽  
Seungmoo Lee ◽  
Yongjoon Ha ◽  
Mingyoo Lim ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Carbon Layer ◽  
Next Generation ◽  
Plasma System ◽  
Layer Film ◽  
Hard Mask ◽  
Inductively Coupled ◽  
Amorphous Carbon Layer

Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3041-3049 ◽  
Author(s):  
C.J. Chen ◽  
L. Chang ◽  
T.S. Lin ◽  
F.R. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Layer ◽  
Chemical Vapor Deposition Method ◽  
Interfacial Region ◽  
Cross Sectional ◽  
Evolution Of Microstructure

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.

Defect Structure of Diamond Film at the Interface with Amorphous Carbon

1992 ◽  
Vol 270 ◽  
Author(s):  
Li Chang
Keyword(s):  
Amorphous Carbon ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Carbon Layer ◽  
Silicon Substrates ◽  
Plasma Chemical Vapor Deposition ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Amorphous Carbon Layer

ABSTRACTDiamond films prepared by microwave plasma chemical vapor deposition, using a gas mixture of methane and hydrogen with ethanol, were formed on silicon substrates. Highresolution transmission electron microscopy was employed to characterize the microstructure at interface regions. It was found that the diamond crystals were grown on an amorphous carbon layer. Twins and stacking faults were observed at the regions interfaced with the amorphous carbon layer, suggesting that the defects may already exist in the nucleation stage and at the very first stage of growth. Also, some diamond nuclei embedded in the amorphous layer were observed.

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