Characterization of particle generated during plasma-enhanced chemical vapor deposition on amorphous carbon layer using particle beam mass spectrometer

2018 ◽  
Vol 36 (2) ◽  
pp. 021506 ◽  
Author(s):  
Dongbin Kim ◽  
TaeWan Kim ◽  
Sang Hyun Park ◽  
Sung Kyu Lim ◽  
Hyo-Chang Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Spectrometer ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Particle Beam ◽  
Carbon Layer ◽  
Amorphous Carbon Layer

Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3041-3049 ◽  
Author(s):  
C.J. Chen ◽  
L. Chang ◽  
T.S. Lin ◽  
F.R. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Carbon Layer ◽  
Chemical Vapor Deposition Method ◽  
Interfacial Region ◽  
Cross Sectional ◽  
Evolution Of Microstructure

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.

Characterization of chemical bonding and physical characteristics of diamond-like amorphous carbon and diamond films

1992 ◽  
Vol 7 (2) ◽  
pp. 404-410 ◽  
Author(s):  
Bharat Bhushan ◽  
Andrew J. Kellock ◽  
Nam-Hee Cho ◽  
Joel W. Ager
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Bulk Diamond

Diamond-like (amorphous) carbon (DLC) films were prepared by dc magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) and diamond films were prepared by microwave plasma enhanced chemical vapor deposition (MPECVD). For the first time, chemical and mechanical characterization of the films from each category are carried out systematically and a comparison of the chemical and physical properties is provided. We find that DLC coatings produced by PECVD are superior in microhardness and modulus of elasticity to those produced by sputtering. PECVD films contain a larger fraction of sp3-bonding than the sputtered hydrogenated carbon films. Chemical and physical properties of the diamond films appear to be close to those of bulk diamond.

Diamond Nucleation During Biased Chemical Vapor Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
Roseann Csencsits ◽  
Janet Rankin ◽  
Rachel E. Boekenhauer ◽  
Michael K. Kundmann ◽  
Brian W. Sheldon
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Carbon Layer ◽  
Diamond Nucleation

ABSTRACTThe initial stages of bias-enhanced chemical vapor deposition (CVD) of diamond were investigated in a microwave-plasma system. Samples were characterized with TEM and concurrent electron energy loss spectroscopy (EELS) to characterize chemical bonding in the deposited material. The results show that a thin amorphous carbon film is deposited during biasing, and that diamond nucleation occurs on this amorphous film. Isolated regions of crystalline SiC within the amorphous layer were also observed at longer bias times. These regions apparently form by a reaction between the amorphous carbon layer and the silicon substrate.

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